Transfer current in p-type graphene/MoS2 heterostructures

Abstract

Transfer characteristics of p-doped graphene/monolayer-MoS2 heterostructure at 300 K are measured experimentally and analyzed based on a model calculation. In the model, we first discretize the Poisson equation (PE) into multiple zones. In each zone the charge density is assumed constant and the PE can be transformed into a linear equation to determine the chemical potential self-consistently. To calculate the electrical conductivity, we solve the Boltzmann transport equation in the relaxation-time approximation using the inelastic acoustic phonon scattering by solving the Dirac equation. The relationship between the Dirac voltage (the voltage at which the Fermi level is located at the Dirac point) and the Fermi energy (i.e. the initial chemical potential at 0K) is derived. These calculations are performed without and with optical pumping and the results obtained agree well with the experimental data.

26 pages, 6 figures

References in corpus (6)

• Electric Field Effect in Atomically Thin Carbon Films
• The electronic properties of graphene
• Universal Dynamic Conductivity and Quantized Visible Opacity of Suspended Graphene
• Doping graphene with metal contacts
• Measurement of the optical dielectric function of transition metal dichalcogenide monolayers: MoS2, MoSe2, WS2 and WSe2
• Measurement of Scattering Rate and Minimum Conductivity in Graphene