Transfer current in p-type graphene/MoS2 heterostructures
arXiv:1912.07176
Abstract
Transfer characteristics of p-doped graphene/monolayer-MoS2 heterostructure at 300 K are measured experimentally and analyzed based on a model calculation. In the model, we first discretize the Poisson equation (PE) into multiple zones. In each zone the charge density is assumed constant and the PE can be transformed into a linear equation to determine the chemical potential self-consistently. To calculate the electrical conductivity, we solve the Boltzmann transport equation in the relaxation-time approximation using the inelastic acoustic phonon scattering by solving the Dirac equation. The relationship between the Dirac voltage (the voltage at which the Fermi level is located at the Dirac point) and the Fermi energy (i.e. the initial chemical potential at 0K) is derived. These calculations are performed without and with optical pumping and the results obtained agree well with the experimental data.
arXiv comment26 pages, 6 figures
References in corpus (12)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Universal Dynamic Conductivity and Quantized Visible Opacity of Suspended Graphene
- Quantifying defects in graphene via Raman spectroscopy at different excitation energies
- Doping graphene with metal contacts
- Measurement of the optical dielectric function of transition metal dichalcogenide monolayers: MoS2, MoSe2, WS2 and WSe2
- Measurement of Scattering Rate and Minimum Conductivity in Graphene
- Band alignment of two-dimensional transition metal dichalcogenides: application in tunnel field effect transistors
- Graphene on metals: a Van der Waals density functional study
- Monolayer MoS2: trigonal warping, "Γ-valley", and spin-orbit coupling effects
- The effective fine structure constant of freestanding graphene measured in graphite
- Atomic defect states in monolayers of MoS and WS