Gate-modulated reflectance spectroscopy for detecting excitonic species in two-dimensional semiconductors

Abstract

We have developed a microspectroscopy technique for measuring gate-modulated reflectance to probe excitonic states in two-dimensional transition metal dichalcogenides. Successfully observing excited states of excitons from cryogenic to room temperature showed that this method is more sensitive to excitonic signals than traditional reflectance spectroscopy. Our results demonstrated the potential of this reflectance spectroscopy method in studying exciton physics in two-dimensional transition metal dichalcogenides and their heterostructures.

References in corpus (7)

• Observation of giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
• Measurement of the optical dielectric function of transition metal dichalcogenide monolayers: MoS2, MoSe2, WS2 and WSe2
• Tightly bound excitons in monolayer WSe2
• Observation of Moiré Excitons in WSe2/WS2 Heterostructure Superlattices
• Resonantly hybridised excitons in moiré superlattices in van der Waals heterostructures
• Excitonic complexes in $n$-doped WS${}_2$ monolayer
• Trion confinement in monolayer MoSe2 by carbon nanotube local gating