Phonon-assisted inter-valley scattering determines ultrafast exciton dynamics in MoSe bilayers
arXiv:2209.08707 · doi:10.1103/PhysRevLett.127.157403
Abstract
While valleys (energy extrema) are present in all band structures of solids, their preeminent role in determining exciton resonances and dynamics in atomically thin transition metal dichalcogenides (TMDC) is unique. Using two-dimensional coherent electronic spectroscopy, we find that exciton decoherence occurs on a much faster time scale in MoSe bilayers than that in the monolayers. We further identify two population relaxation channels in the bilayer, a coherent and an incoherent one. Our microscopic model reveals that phonon-emission processes facilitate scattering events from the valley to other lower energy and valleys in the bilayer. Our combined experimental and theoretical studies unequivocally establish different microscopic mechanisms that determine exciton quantum dynamics in TMDC monolayers and bilayers. Understanding exciton quantum dynamics provides critical guidance to manipulation of spin/valley degrees of freedom in TMDC bilayers.
arXiv comment6 pages, 4 figures
References in corpus (39)
- Atomically thin MoS2: A new direct-gap semiconductor
- Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
- Control of valley polarization in monolayer MoS2 by optical helicity
- Valley polarization in MoS2 monolayers by optical pumping
- MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect
- Excitons in atomically thin transition metal dichalcogenides
- Electrical Control of Two-Dimensional Neutral and Charged Excitons in a Monolayer Semiconductor
- Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2
- Measurement of the optical dielectric function of transition metal dichalcogenide monolayers: MoS2, MoSe2, WS2 and WSe2
- k.p theory for two-dimensional transition metal dichalcogenide semiconductors
- Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors
- Understanding Band Gaps of Solids in Generalized Kohn-Sham Theory
- Intrinsic Exciton Linewidth in Monolayer Transition Metal Dichalcogenides
- Excitonic linewidth and coherence lifetime in monolayer transition metal dichalcogenides
- Photocarrier relaxation in two-dimensional semiconductors
- Exciton Radiative Lifetime in Transition Metal Dichalcogenide Monolayers
- Intrinsic Transport Properties of Electrons and Holes in Monolayer Transition Metal Dichalcogenides
- Direct Measurement of Exciton Valley Coherence in Monolayer WSe
- Directly visualizing the momentum forbidden dark excitons and their dynamics in atomically thin semiconductors
- Electronic properties of single-layer and multilayer transition metal dichalcogenides ( Mo, W and S, Se)
- Thickness-Dependent Differential Reflectance Spectra of Monolayer and Few-Layer MoS2, MoSe2, WS2 and WSe2
- Exciton band structure in layered MoSe2: from a monolayer to the bulk limit
- Neutral and Charged Inter-Valley Biexcitons in Monolayer MoSe
- Broken mirror symmetry in excitonic response of reconstructed domains in twisted MoSe/MoSe bilayers
- Moiré Excitons Correlated with Superlattice Structure in Twisted WSe/WSe Homobilayers
- Polarization and time-resolved photoluminescence spectroscopy of excitons in MoSe2 monolayers
- Phonon-assisted Photoluminescence from Dark Excitons in Monolayers of Transition Metal Dichalcogenides
- Exciton Relaxation Cascade in Two-dimensional Transition-metal dichalcogenides
- The role of momentum-dark excitons in the elementary optical response of bilayer WSe
- Coherent and Incoherent Coupling Dynamics between Neutral and Charged Excitons in Monolayer MoSe2
- Momentum-resolved observation of exciton formation dynamics in monolayer WS
- Exciton-exciton interaction in transition metal dichalcogenide monolayers and van der Waals heterostructures
- Direct measurement of key exciton properties: energy, dynamics and spatial distribution of the wave function
- Layer dependent electronic structure changes in transition metal dichalcogenides- The microscopic origin
- Exciton-Scattering-Induced Dephasing in Two-Dimensional Semiconductors
- Impact of strain on the excitonic linewidth in transition metal dichalcogenides
- Ultrafast dynamics in monolayer TMDCs: the interplay of dark excitons, phonons and intervalley Coulomb exchange
- Phonon-assisted oscillatory exciton dynamics in monolayer MoSe2
- Quenching of Intervalley Exchange Coupling in the Presence of Momentum-Dark States in TMDCs
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- Highly nonlinear dipolar exciton-polaritons in bilayer MoS
- Time-linear scaling NEGF methods for real-time simulations of interacting electrons and bosons. I. Formalism
- Nonlinear optics in 2D materials: from classical to quantum
- First Principle Study for Optical Properties of TMDC/Graphene Heterostructures
- Magnetically tunable exciton valley coherence in monolayer WS mediated by the electron-hole exchange and exciton-phonon interactions
- On the importance of electron-electron and electron-phonon scatterings and energy renormalizations during carrier relaxation in monolayer transition-metal dichalcogenides
- Two-dimensional polaron spectroscopy of Fermi superfluids
- Laser-field detuning assisted optimization of exciton valley dynamics in monolayer WSe: Geometric quantum speed limit
- Fundamentals of heterodyne wave mixing spectroscopy: a tutorial
- Fast Interlayer Energy Transfer from the Lower Bandgap MoS2 to the Higher Bandgap WS2