Phonon-assisted Photoluminescence from Dark Excitons in Monolayers of Transition Metal Dichalcogenides

Abstract

The photoluminescence (PL) spectrum of transition metal dichalcogenides (TMDs) shows a multitude of emission peaks below the bright exciton line and not all of them have been explained yet. Here, we study the emission traces of phonon-assisted recombinations of momentum-dark excitons. To this end, we develop a microscopic theory describing simultaneous exciton, phonon and photon interaction and including consistent many-particle dephasing. We explain the drastically different PL below the bright exciton in tungsten- and molybdenum-based materials as result of different configurations of bright and dark states. In good agreement with experiments, we show that WSe${}_2$ exhibits clearly visible low-temperature PL signals stemming from the phonon-assisted recombination of momentum-dark excitons.

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Cited by in corpus (70)

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• Exciton diffusion in monolayer semiconductors with suppressed disorder
• Exciton-exciton interaction in transition metal dichalcogenide monolayers and van der Waals heterostructures
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• Dark exciton-exciton annihilation in monolayer WSe${}_2$
• Exciton spectroscopy and diffusion in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride
• Brightening of spin- and momentum-dark excitons in transition metal dichalcogenides
• Dark-exciton driven energy funneling into dielectric inhomogeneities in two-dimensional semiconductors
• Ultrafast dynamics of bright and dark excitons in monolayer WSe${}_2$ and heterobilayer WSe${}_2$/MoS${}_2$
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