Dark excitons in transition metal dichalcogenides
arXiv:1709.00941 · doi:10.1103/PhysRevMaterials.2.014002
Abstract
Monolayer transition metal dichalcogenides (TMDs) exhibit a remarkably strong Coulomb interaction that manifests in tightly bound excitons. Due to the complex electronic band structure exhibiting several spin-split valleys in the conduction and valence band, dark excitonic states can be formed. They are inaccessibly by light due to the required spin-flip and/or momentum transfer. The relative position of these dark states with respect to the optically accessible bright excitons has a crucial impact on the emission efficiency of these materials and thus on their technological potential. Based on the solution of the Wannier equation, we present the excitonic landscape of the most studied TMD materials including the spectral position of momentum- and spin-forbidden excitonic states. We show that the knowledge of the electronic dispersion does not allow to conclude about the nature of the material's band gap, since excitonic effects can give rise to significant changes. Furthermore, we reveal that an exponentially reduced photoluminescence yield does not necessarily reflect a transition from a direct to a non-direct gap material, but can be ascribed in most cases to a change of the relative spectral distance between bright and dark excitonic states.
References in corpus (11)
- Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides
- k.p theory for two-dimensional transition metal dichalcogenide semiconductors
- Ultrafast Dynamics of Defect-Assisted Electron-Hole Recombination in Monolayer MoS2
- Exciton band structure of monolayer MoS2
- Probing the influence of dielectric environment on excitons in monolayer WSe2: Insight from high magnetic fields
- Brightening of dark excitons in monolayers of semiconducting transition metal dichalcogenides
- Intervalley Scattering and Localization Behaviors of Spin-Valley Coupled Dirac Fermions
- Excitons versus electron-hole plasma in monolayer transition metal dichalcogenide semiconductors
- Phonon Sidebands in Transition Metal Dichalcogenides
- Microscopic description of intraband absorption in graphene: the occurrence of transient negative differential transmission
- Auger recombination of dark excitons in and monolayers
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- Nonclassical Exciton Diffusion in Monolayer WSe2
- Dark-exciton driven energy funneling into dielectric inhomogeneities in two-dimensional semiconductors
- Delocalization of dark and bright excitons in flat-band materials and the optical properties of VO
- Visualization of dark excitons in semiconductor monolayers for high-sensitivity strain sensing
- Direct Observation of Intravalley Phonon Scattering of 2s Excitons in MoSe and WSe Monolayers
- Moiré Engineering of Spin-Orbit Coupling in Twisted Platinum Diselenide
- Light-matter coupling and non-equilibrium dynamics of exchange-split trions in monolayer WS2
- Monolayer Semiconductor Auger Detector
- Magnetic field mixing and splitting of bright and dark excitons in monolayer MoSe2
- Molecule signatures in photoluminescence spectra of transition metal dichalcogenides
- Hybrid dark excitons in monolayer
- Spectral asymmetry of phonon sideband luminescence in monolayer and bilayer WSe2
- Dark-Exciton-Mediated Fano Resonance from a Single Gold Nanostructure Deposited on Monolayer WS2 at Room Temperature
- Strong Interaction of Cherenkov Radiation with Excitons in WSe2 Crystals
- Radiative Decay of Dark Exciton Related Emission in a Sandwiched Monolayer WSe2 Revealed by Room Temperature Micro and Nano Photoluminescence