Analytical description of the 1s exciton linewidth temperature-dependence in transition metal dichalcogenides

Abstract

We obtain an analytical expression for the linewidth of the 1s-exciton as a function of temperature in transition metal dichalcogenides. The total linewidth, as function of temperature, is dominated by three contributions: (i) the radiative decay (essentially temperature independent); (ii) the phonon-induced intravalley scattering; (iii) the phonon-induced intervalley scattering. Our approach uses a variational \emph{Ansatz} to solve the Wannier equation allowing for an analytical treatment of the excitonic problem, including rates of the decay dynamics. Our results are in good agreement with experimental data already present in the literature and can be used to readily predict the value of the total linewidth at any temperature in the broad class of excitonic two-dimensional materials.

arXiv comment6 pages; suplemental material is available from the authors upon reasonable request

References in corpus (23)

• Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
• Excitons in atomically thin transition metal dichalcogenides
• First-principles study of the phonon-limited mobility in n-type single-layer MoS2
• k.p theory for two-dimensional transition metal dichalcogenide semiconductors
• Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors
• Dielectric screening in two-dimensional insulators: Implications for excitonic and impurity states in graphane
• Excitonic linewidth approaching the homogeneous limit in MoS2 based van der Waals heterostructures : accessing spin-valley dynamics
• Excitonic linewidth and coherence lifetime in monolayer transition metal dichalcogenides
• Intrinsic Electrical Transport Properties of Monolayer Silicene and MoS2 from First Principles
• Intrinsic Transport Properties of Electrons and Holes in Monolayer Transition Metal Dichalcogenides
• Acoustic phonon limited mobility in two-dimensional semiconductors: Deformation potential and piezoelectric scattering in monolayer MoS2 from first principles
• Atomically thin mirrors made of monolayer semiconductors
• Optical properties of atomically thin transition metal dichalcogenides: Observations and puzzles
• Dark excitons in transition metal dichalcogenides
• Analytical approach to excitonic properties of MoS2
• Simple Screened Hydrogen Model of Excitons in Two-Dimensional Materials
• Polarization analysis of excitons in monolayer and bilayer transition-metal dichalcogenides
• Exciton-phonon coupling in MoSe2 monolayers
• Mapping of the dark exciton landscape in transition metal dichalcogenides
• Absorption of single-layer hexagonal boron nitride in the ultraviolet
• Excitonic Magneto-Optical Kerr Effect in 2D Transition Metal Dichalcogenides Induced by Spin Proximity
• A colloquium on the variational method applied to excitons in 2D materials
• Exploration of the bright and dark exciton landscape and fine structure of MoS${}_2$ (using G${}_0$W${}_0$-BSE)

Cited by in corpus (8)

• Theoretical methods for excitonic physics in two-dimensional materials
• Exciton-phonon interaction calls for a revision of the "exciton" concept
• Absorption and optical selection rules of tunable excitons in biased bilayer graphene
• Electrically Tunable Interband Collective Excitations in Biased Bilayer and Trilayer Graphene
• Tunable Excitons in Rhombohedral Trilayer Graphene
• Tunable exciton polaritons in band-gap engineered hexagonal boron nitride
• Ultrafast Coherent Bandgap Modulation Probed by Parametric Nonlinear Optics
• Contribution to Excitonic Linewidth from Free Carrier-Exciton Scattering in Layered Materials: The example of h-BN