Tunable Excitons in Rhombohedral Trilayer Graphene
arXiv:2202.06695 · doi:10.1103/PhysRevB.105.205417
Abstract
Trilayer graphene is receiving an increasing level of attention due to its stacking--dependent magnetoelectric and optoelectric properties, and its more robust ferromagnetism relative to monolayer and bilayer variants. Additionally, rhombohedral stacked trilayer graphene presents the possibility of easily opening a gap via either an external electric field perpendicular to the layers, or via the application of external strain. In this paper, we consider an external electric field to open a bandgap in rhombohedral trilayer graphene and study the excitonic optical response of the system. This is done via the combination of a tight binding model with the Bethe--Salpeter equation, solved semi--analytically and requiring only a simple numerical quadrature. We then discuss the valley--dependent optical selection rules, followed by the computation of the excitonic linear optical conductivity for the case of a rhombohedral graphene trilayer encapsulated in hexagonal boron nitride. The tunability of the excitonic resonances via an external field is also discussed, together with the increasing localization of the excitonic states as the field increases.
17 pages, 6 figures
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Cited by in corpus (7)
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- Anisotropic linear and non-linear excitonic optical properties of buckled monolayer semiconductors
- Dynamical screening and excitonic bound states in biased bilayer graphene
- Tunable nonlinear excitonic optical response in biased bilayer graphene
- Identification of graphite with perfect rhombohedral stacking by electronic Raman scattering
- The Transmission Line Model for 2D Materials and van der Waals Heterostructures
- Strongly Coupled Exciton--Hyperbolic-phonon-polariton Hybridized States in hBN-encapsulated Biased Bilayer Graphene