Absorption and optical selection rules of tunable excitons in biased bilayer graphene
arXiv:2111.10555 · doi:10.1103/PhysRevB.105.045411
Abstract
Biased bilayer graphene, with its easily tunable band gap, presents itself as the ideal system to explore the excitonic effect in graphene based systems. In this paper we study the excitonic optical response of such a system by combining a tight binding model with the solution of the Bethe-Salpeter equation, the latter being solved in a semi-analytical manner, requiring a single numerical quadrature, thus allowing for a transparent calculation. With our approach we start by analytically obtaining the optical selection rules, followed by the computation of the absorption spectrum for the case of a biased bilayer encapsulated in hexagonal boron nitride, a system which has been the subject of a recent experimental study. An excellent agreement is seen when we compare our theoretical prediction with the experimental data.
arXiv comment5 fugues, one comparing experimental data and theory
References in corpus (22)
- Electric Field Effect in Atomically Thin Carbon Films
- Excitons in atomically thin transition metal dichalcogenides
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- Gate-induced insulating state in bilayer graphene devices
- Dielectric screening in two-dimensional insulators: Implications for excitonic and impurity states in graphane
- Moiré excitons: from programmable quantum emitter arrays to spin-orbit coupled artificial lattices
- Deterministic strain-induced arrays of quantum emitters in a two-dimensional semiconductor
- Excitonic linewidth and coherence lifetime in monolayer transition metal dichalcogenides
- Electronic structures and optical properties of realistic transition metal dichalcogenide heterostructures from first principles
- An Introduction to Graphene Plasmonics
- Tunable band gaps in bilayer graphene-BN heterostructures
- Efficient approach to solve the Bethe-Salpeter equation for excitonic bound states
- Electronic polarizability as the fundamental variable in the dielectric properties of two-dimensional materials
- Excitons in boron nitride single layer
- Near-unity light absorption in a monolayer WS2 van der Waals heterostructure cavity
- Tunable Excitons in Biased Bilayer Graphene
- Band Topology, Orbital Phase Winding, and Selection Rules in Excitonic Physics in Two Dimensions
- Optical Selection Rule of Excitons in Gapped Chiral Fermion Systems
- Nonlinear optical selection rules of excitons in monolayer transition metal dichalcogenides
- Analytical description of the 1s exciton linewidth temperature-dependence in transition metal dichalcogenides
- Excitons without effective mass: biased bilayer graphene
- Optical spectra of 2D monolayers from time-dependent density functional theory
Cited by in corpus (16)
- Theoretical methods for excitonic physics in two-dimensional materials
- Electrically Tunable Interband Collective Excitations in Biased Bilayer and Trilayer Graphene
- Tunable Excitons in Rhombohedral Trilayer Graphene
- Moiré excitons in biased twisted bilayer graphene under pressure
- Anisotropic linear and non-linear excitonic optical properties of buckled monolayer semiconductors
- Dynamical screening and excitonic bound states in biased bilayer graphene
- Electrically Tunable Fine Structure of Negatively Charged Excitons in Gated Bilayer Graphene Quantum Dots
- Tunable nonlinear excitonic optical response in biased bilayer graphene
- Optical Properties of Gated Bilayer Graphene Quantum Dots with Trigonal Warping
- Tunable exciton polaritons in band-gap engineered hexagonal boron nitride
- Tunable exciton polaritons in biased bilayer graphene
- Strongly Coupled Exciton--Hyperbolic-phonon-polariton Hybridized States in hBN-encapsulated Biased Bilayer Graphene
- The Transmission Line Model for 2D Materials and van der Waals Heterostructures
- Cavity-Driven Attractive Interactions in Quantum Materials
- Excitonic optical absorption in strained monolayer CrSBr
- Excitonic instability in transition metal dichalcogenides