Dark exciton-exciton annihilation in monolayer WSe
arXiv:2106.05035 · doi:10.1103/PhysRevB.104.L241406
Abstract
The exceptionally strong Coulomb interaction in semiconducting transition-metal dichalcogenides (TMDs) gives rise to a rich exciton landscape consisting of bright and dark exciton states. At elevated densities, excitons can interact through exciton-exciton annihilation (EEA), an Auger-like recombination process limiting the efficiency of optoelectronic applications. Although EEA is a well-known and particularly important process in atomically thin semiconductors determining exciton lifetimes and affecting transport at elevated densities, its microscopic origin has remained elusive. In this joint theory-experiment study combining microscopic and material-specific theory with time- and temperature-resolved photoluminescence measurements, we demonstrate the key role of dark intervalley states that are found to dominate the EEA rate in monolayer WSe. We reveal an intriguing, characteristic temperature dependence of Auger scattering in this class of materials with an excellent agreement between theory and experiment. Our study provides microscopic insights into the efficiency of technologically relevant Auger scattering channels within the remarkable exciton landscape of atomically thin semiconductors.
17 pages, 6 figures
References in corpus (11)
- Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
- k.p theory for two-dimensional transition metal dichalcogenide semiconductors
- Ultrafast transition between exciton phases in van der Waals heterostructures
- Dark excitons in transition metal dichalcogenides
- Valley Phonons and Exciton Complexes in a Monolayer Semiconductor
- Non-uniform sampling schemes of the Brillouin zone for many-electron perturbation-theory calculations in reduced dimensionality
- Exciton-Scattering-Induced Dephasing in Two-Dimensional Semiconductors
- Intrinsic Lifetime of Higher Excitonic States in Tungsten Diselenide Monolayers
- Nonclassical Exciton Diffusion in Monolayer WSe2
- Twist-angle engineering of excitonic quantum interference and optical nonlinearities in stacked 2D semiconductors
- Auger recombination of dark excitons in and monolayers
Cited by in corpus (15)
- Electrical control of hybrid exciton transport in a van der Waals heterostructure
- Exciton optics, dynamics and transport in atomically thin semiconductors
- Strain control of hybridization between dark and localized excitons in a 2D semiconductor
- Microscopic origin of anomalous interlayer exciton transport in van der Waals heterostructures
- Theoretical methods for excitonic physics in two-dimensional materials
- Probing correlations in the exciton landscape of a moiré heterostructure
- Ultrafast phonon-driven charge transfer in van der Waals heterostructures
- Leaky exciton condensates in transition metal dichalcogenide moiré bilayers
- Signatures of dark excitons in exciton-polariton optics of transition metal dichalcogenides
- Impact of optically pumped non-equilibrium steady states on luminescence emission of atomically-thin semiconductor excitons
- Excitonic thermalization bottleneck in twisted TMD heterostructures
- Wannier-Function-Based Approach to Coupled Exciton-Phonon-Photon Dynamics in Two-Dimensional Semiconductors
- Strain-Enabled Giant Second-Order Susceptibility in Monolayer WSe
- Valley-controlled many-body exciton interactions in monolayer WSe phototransistors
- Universal fragmentation in annihilation reactions with constrained kinetics