Radiative Decay of Dark Exciton Related Emission in a Sandwiched Monolayer WSe2 Revealed by Room Temperature Micro and Nano Photoluminescence
arXiv:2006.04979
Abstract
TMDCs have attracted a lot of attention in recent years due to their unique indirect to direct band gap transition from bulk to monolayer thickness. Strong confinement in the out-of-plane direction enhances the Coulomb potential between the charged particles (e-h pairs) and thus increases the exciton binding energy dramatically. The lattice inversion asymmetry in a monolayer creates two non-equivalent (but degenerate in energy) band edges protected by time reversal polarisation via pseudo-spin. However, the presence of strong spin-orbit coupling in the valence band and weak spin-splitting in the conduction band results in the lowest lying exciton in WX2 (X = S, Se) being spin forbidden and optically dark. Because of their long life times, dark excitons (XD) are highly attractive for quantum optics and optoelectronic applications. To date studying XD emission is limited to cryogenic temperature or required very complex experimental configurations to observe them at room temperature (RT). Here, we demonstrate a novel approach of radiative decay of XD related emissions in 1L-WSe2 studied by micro and nano PL at RT. 1L-WSe2 flakes were sandwiched by noble metal (Au or Ag) substrates and PDMS nano-patches providing a strong local out-of-plane dipole moment with respect to the 2D plane. This strong dipole moment not only enhances the XD in WSe2, it also produces bound excitons due to extrinsic charge defects visible at RT. The spatial distributions of these XD related emissions were studied by TEPL with a spatial resolution < 10 nm confirming the confinement of these excitons within the PDMS nano-patches. Finally, by removing the nano-patches from the top of the flakes we are able to recover the bright excitons in the 1L-WSe2. Our approach paves the way for deep understanding and to harness excitonic properties in low dimensional semiconductors, thus offering a platform towards quantum optics.
arXiv comment17 pages, 6 figures
References in corpus (22)
- MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect
- Optical Generation of Excitonic Valley Coherence in Monolayer WSe2
- Valley Dependent Optoelectronics from Inversion Symmetry Breaking
- Magnetic brightening and control of dark excitons in monolayer WSe2
- Large spin splitting in the conduction band of transition metal dichalcogenide monolayers
- In-plane Propagation of Light in Transition Metal Dichalcogenide Monolayers: Optical Selection Rules
- Probing dark excitons in atomically thin semiconductors via near-field coupling to surface plasmon polaritons
- Valley excitons in two-dimensional semiconductors
- Direct Measurement of Exciton Valley Coherence in Monolayer WSe
- Splitting between Bright and Dark excitons in Transition Metal Dichalcogenide Monolayers
- Ultrafast Manipulation of Valley Pseudospin
- Brightening of dark excitons in monolayers of semiconducting transition metal dichalcogenides
- Dark excitons in transition metal dichalcogenides
- Localized inter-valley defect excitons as single-photon emitters in WSe
- Bose-Einstein condensation in semiconductors: the key role of dark excitons
- Gate tunable dark trions in monolayer WSe
- Momentum-Dark Intervalley Exciton in Monolayer Tungsten Diselenide Brightened via Chiral Phonon
- Spin-flip processes and radiative decay of dark intravalley excitons in transition metal dichalcogenide monolayers
- Direct Observation of Gate Tunable Dark Trions in Monolayer WSe2
- Inter-valley dark trion states with spin lifetimes of 150 ns in WSe
- Trion and Biexciton in Monolayer Transition Metal Dichalcogenides
- Localization-induced optical properties of monolayer transition-metal dichalcogenides