Broadband Linear-Dichroic Photodetector in a Black Phosphorus Vertical p-n Junction

Abstract

The ability to detect light over a broad spectral range is central for practical optoelectronic applications, and has been successfully demonstrated with photodetectors of two-dimensional layered crystals such as graphene and MoS2. However, polarization sensitivity within such a photodetector remains elusive. Here we demonstrate a linear-dichroic broadband photodetector with layered black phosphorus transistors, using the strong intrinsic linear dichroism arising from the in-plane optical anisotropy with respect to the atom-buckled direction, which is polarization sensitive over a broad bandwidth from 400 nm to 3750 nm. Especially, a perpendicular build-in electric field induced by gating in black phosphorus transistors can spatially separate the photo-generated electrons and holes in the channel, effectively reducing their recombination rate, and thus enhancing the efficiency and performance for linear dichroism photodetection. This provides new functionality using anisotropic layered black phosphorus, thereby enabling novel optical and optoelectronic device applications.

18 pages, 5 figures in Nature Nanotechnology 2015

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• Multilayers black phosphorus: from tight-binding to continuum description
• A Perspective on Recent Advances in Phosphorene Functionalization and its Application in Devices
• Atomic-scale imaging of few-layer black phosphorus and its reconstructed edge
• Anisotropic buckling of few-layer black phosphorus
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• Mechanical and liquid phase exfoliation of cylindrite: a natural van der Waals superlattice with intrinsic magnetic interactions
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• Excitons in Phosphorene: A Semi-Analytical Perturbative Approach
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• Anisotropy of the Optical Properties of Pentacene:Black Phosphorus Interfaces
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• Electrical Control of Linear Dichroism in Black Phosphorus from the Visible to Mid-Infrared