Type-controlled Nanodevices Based on Encapsulated Few-layer Black Phosphorus for Quantum Transport

Abstract

We demonstrate that encapsulation of atomically thin black phosphorus (BP) by hexagonal boron nitride (h-BN) sheets is very effective for minimizing the interface impurities induced during fabrication of BP channel material for quantum transport nanodevices. Highly stable BP nanodevices with ultrahigh mobility and controllable types are realized through depositing appropriate metal electrodes after conducting a selective etching to the BP encapsulation structure. Chromium and titanium are suitable metal electrodes for BP channels to control the transition from a p-type unipolar property to ambipolar characteristic because of different work functions. Record-high mobilities of 6000 $c{m}^2{V}^{-1}{s}^{-1}$ and 8400 $c{m}^2{V}^{-1}{s}^{-1}$ are respectively obtained for electrons and holes at cryogenic temperatures. High-mobility BP devices enable the investigation of quantum oscillations with an indistinguishable Zeeman effect in laboratory magnetic field.

14 pages, 3 figures

References in corpus (17)

• Black phosphorus field-effect transistors
• High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
• Rediscovering Black Phosphorus: A Unique Anisotropic 2D Material for Optoelectronics and Electronics
• Strain-induced gap modification in black phosphorus
• Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation
• Broadband Linear-Dichroic Photodetector in a Black Phosphorus Vertical p-n Junction
• Strain-Engineering Anisotropic Electrical Conductance of Phosphorene and Few-Layer Black Phosphorus
• Layer-dependent Band Alignment and Work Function of Few-Layer Phosphorene
• High quality sandwiched black phosphorus heterostructure and its quantum oscillations
• Quality heterostructures from two dimensional crystals unstable in air by their assembly in inert atmosphere
• Quantum Hall Effect in Black Phosphorus Two-dimensional Electron Gas
• High-Performance Monolayer WS2 Field-effect Transistors on High-k Dielectrics
• Gate Tunable Quantum Oscillations in Air-Stable and High Mobility Few-Layer Phosphorene Heterostructures
• Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers
• Two-Dimensional Magnetotransport in a Black Phosphorus Naked Quantum Well
• Probing Electron Interactions in a Two-Dimensional System by Quantum Magneto-Oscillations
• Realization of Room-Temperature Phonon-limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening

Cited by in corpus (7)

• Quantum Hall Effect in Ultrahigh Mobility Two-dimensional Hole Gas of Black Phosphorus
• Isolation and Characterization of Few-layer Manganese Thiophosphite
• Quantum Hall Effect in Electron-Doped Black Phosphorus Field-Effect Transistors
• Long-range electrostatic contribution to the electron-phonon couplings and mobilities of two-dimensional and bulk materials
• $k\cdot p$ theory for phosphorene: Effective g-factors, Landau levels, and excitons
• Quantum Transport in Ambipolar Few-layer Black Phosphorus
• Gate-tunable strong-weak localization transition in few-layer black phosphorus