513 citations · 2k across the 20 of their papers we have counts for
20 papers
Bridging the gap between atomically thin semiconductors and metal leads
Xiangbin Cai, Zefei Wu, Xu Han +15
Electrically interfacing atomically thin transition metal dichalcogenide semiconductors (TMDSCs) with metal leads is challenging because of undesired interface barriers, which have…
Isolation and Characterization of Few-layer Manganese Thiophosphite
Gen Long, Ting Zhang, Xiangbin Cai +12
This work reports an experimental study on an antiferromagnetic honeycomb lattice of MnPS that couples the valley degree of freedom to a macroscopic antiferromagnetic order. Th…
Quantum Transport in Ambipolar Few-layer Black Phosphorus
Gen Long, Denis Maryenko, Sergio Pezzini +10
Few-layer black phosphorus possesses unique electronic properties giving rise to distinct quantum phenomena and thus offers a fertile platform to explore the emergent correlation p…
Gate-tunable strong-weak localization transition in few-layer black phosphorus
Gen Long, Shuigang Xu, Xiangbin Cai +8
Atomically thin black phosphorus (BP) field-effect transistors show strong-weak localization transition which is tunable through gate voltages. Hopping transports through charge im…
Odd-integer quantum Hall states and giant spin susceptibility in p-type few-layer WSe2
Shuigang Xu, Junying Shen, Gen Long +17
We fabricate high-mobility p-type few-layer WSe2 field-effect transistors and surprisingly observe a series of quantum Hall (QH) states following an unconventional sequence predomi…
Charge Density Wave Phase Transition on the Surface of Electrostatically Doped Multilayer Graphene
Gen Long, Shuigang Xu, Ting Zhang +6
We demonstrate that charge density wave (CDW) phase transition occurs on the surface of electronically doped multilayer graphene when the Fermi level approaches the M points (also…
Type-controlled Nanodevices Based on Encapsulated Few-layer Black Phosphorus for Quantum Transport
Gen Long, Shuigang Xu, Junying Shen +8
We demonstrate that encapsulation of atomically thin black phosphorus (BP) by hexagonal boron nitride (h-BN) sheets is very effective for minimizing the interface impurities induce…
Geometric Metasurface Fork Gratings for Vortex Beam Generation and Manipulation
Shumei Chen, Yuan Cai, Guixin Li +2
In recent years, optical vortex beams possessing orbital angular momentum have caught much attention due to their potential for high capacity optical communications. This capabilit…
Probing the Electronic States in Black Phosphorus Vertical Heterostructures
Xiaolong Chen, Lin Wang, Yingying Wu +14
Atomically thin black phosphorus (BP) is a promising two-dimensional material for fabricating electronic and optoelectronic nano-devices with high mobility and tunable bandgap stru…
Band bending at interfaces between topological insulator Bi2Se3 and transition metals
Weiguang Ye, A. B. Pakhomov, Shuigang Xu +11
Interfaces between exfoliated topological insulator Bi2Se3 and several transition metals deposited by sputtering were studied by XPS, SIMS, UPS and contact I-V measurements. Chemic…
Observation of Valley Zeeman and Quantum Hall Effects at Q Valley of Few-Layer Transition Metal Disulfides
Zefei Wu, Shuigang Xu, Huanhuan Lu +10
In few-layer (FL) transition metal dichalcogenides (TMDC), the conduction bands along the Gamma-K directions shift downward energetically in the presence of interlayer interactions…
Negative Compressibility in Graphene-terminated Black Phosphorus Heterostructures
Yingying Wu, Xiaolong Chen, Zefei Wu +7
Negative compressibility generated by many-body effects in 2D electronic systems can enhance gate capacitance. We observe capacitance enhancement in a newly emerged 2D layered mate…
Quantum Hall Effect in Ultrahigh Mobility Two-dimensional Hole Gas of Black Phosphorus
Gen Long, Denis Maryenko, Junying Shen +9
We demonstrate that a field effect transistor (FET) made of few layer black phosphorus (BP) encapsulated in hexagonal boron nitride (h-BN) in vacuum, exhibts the room temperature h…
Fast Transfer-free Synthesis of High-quality Monolayer Graphene on Insulating Substrates by Simple Rapid Thermal Treatment
Zefei Wu, Yanqing Guo, Yuzheng Guo +13
The transfer-free synthesis of high-quality, large-area graphene on a given dielectric substrate, which is highly desirable for device applications, remains a significant challenge…
Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides
Shuigang Xu, Zefei Wu, Huanhuan Lu +14
Low carrier mobility and high electrical contact resistance are two major obstacles prohibiting explorations of quantum transport in TMDCs. Here, we demonstrate an effective method…
High quality sandwiched black phosphorus heterostructure and its quantum oscillations
Xiaolong Chen, Yingying Wu, Zefei Wu +8
Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides have attracted great attention because of the rich physics and potential applications in next-…
Detection of Interlayer Interaction in Few-layer Graphene through Landau Level Spectroscopy
Zefei Wu, Yu Han, Wei Zhu +12
We demonstrate that surface relaxation, which is insignificant in trilayer graphene, starts to manifest in Bernal-stacked tetralayer graphene. Bernal-stacked few-layer graphene has…
High-Quality BN-Graphene-BN Nanoribbon Capacitors Modulated by Graphene Side-gate Electrodes
Yang Wang, Xiaolong Chen, Weiguang Ye +6
High-quality BN-Graphene-BN nanoribbon capacitors with double side-gates of graphene are experimentally realized. Graphene electronic properties can be significantly modulated by t…
Dense network of one-dimensional mid-gap metallic modes in monolayer MoSe2 and their spatial undulations
Hongjun Liu, Lu Jiao, Fang Yang +9
We report the observation of a dense triangular network of one-dimensional (1D) metallic modes in a continuous and uniform monolayer of MoSe2 grown by molecular-beam epitaxy. High-…
Probing the Electron States and Metal-Insulator Transition Mechanisms in Atomically Thin MoS2 Based on Vertical Heterostructures
Xiaolong Chen, Zefei Wu, Shuigang Xu +12
The metal-insulator transition (MIT) is one of the remarkable electrical transport properties of atomically thin molybdenum disulphide (MoS2). Although the theory of electron-elect…