Negative Compressibility in Graphene-terminated Black Phosphorus Heterostructures

Abstract

Negative compressibility generated by many-body effects in 2D electronic systems can enhance gate capacitance. We observe capacitance enhancement in a newly emerged 2D layered material, atomically thin black phosphorus (BP). The encapsulation of BP by hexagonal boron nitride sheets with few-layer graphene as a terminal ensures ultraclean heterostructure interfaces, allowing us to observe negative compressibility at low hole carrier concentrations. We explained the negative compressibility based on the Coulomb correlation among in-plane charges and their image charges in a gate electrode in the framework of Debye screening.

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Cited by in corpus (6)

• Charge-order-enhanced capacitance in semiconductor moiré superlattices
• Origin of Contact Resistance at Ferromagnetic Metal-Graphene Interfaces
• Negative electronic compressibility enables electrically-induced charge density waves in a two-dimensional electron liquid
• Novel mechanisms to enhance the capacitance beyond the classical limits in capacitors with free-electron-like electrodes
• Negative compressibility in MoS2 capacitance
• Anisotropic charge density wave in electron-hole double monolayers: Applied to phosphorene