Charge Density Wave Phase Transition on the Surface of Electrostatically Doped Multilayer Graphene
arXiv:1610.07267 · doi:10.1063/1.4966953
Abstract
We demonstrate that charge density wave (CDW) phase transition occurs on the surface of electronically doped multilayer graphene when the Fermi level approaches the M points (also known as van Hove singularities where the density of states diverge) in the Brillouin zone of graphene band structure. The occurrence of such CDW phase transitions are supported by both the electrical transport measurement and optical measurements in electrostatically doped multilayer graphene. The CDW transition is accompanied with the sudden change of graphene channel resistance at T= 100K, as well as the splitting of Raman G peak (1580 cm). The splitting of Raman G peak indicats the lifting of in-plane optical phonon branch degeneracy and the non-degenerate phonon branches are correlated to the lattice reconstructions of graphene -- the CDW phase transition.
13 Pages, 4 Figures
References in corpus (7)
- Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering
- Uniaxial Strain in Graphene by Raman Spectroscopy: G peak splitting, Gruneisen Parameters and Sample Orientation
- Gate-tunable Phase Transitions in 1T-TaS
- Fermi surface nesting and the origin of Charge Density Waves in metals
- From Graphene to Carbon Fibres: Mechanical Deformation and Development of a Universal Stress Sensor
- On the effect of weak disorder on the density of states in graphene
- A Raman study of the Charge-Density-Wave State in AMoO (A = K,Rb)