Multiband Transport in Bilayer Graphene at High Carrier Densities

Abstract

We report a multiband transport study of bilayer graphene at high carrier densities. Employing a poly(ethylene)oxide-CsClO${}_4$ solid polymer electrolyte gate we demonstrate the filling of the high energy subbands in bilayer graphene samples at carrier densities $|n|\ge 2.4\times 10^{13}$ cm${}^{-2}$. We observe a sudden increase of resistance and the onset of a second family of Shubnikov de Haas (SdH) oscillations as these high energy subbands are populated. From simultaneous Hall and magnetoresistance measurements together with SdH oscillations in the multiband conduction regime, we deduce the carrier densities and mobilities for the higher energy bands separately and find the mobilities to be at least a factor of two higher than those in the low energy bands.

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• Controlled Electrochemical Intercalation of Graphene/h-BN van der Waals Heterostructures
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• Gate-defined Two-dimensional Hole and Electron Systems in an Undoped InSb Quantum Well
• Optical Phonon Anomaly in Bilayer Graphene with Ultrahigh Carrier Densities
• Electric Field Effects on the Optical Vibrations in AB-Stacked Bilayer Graphene
• Electron-electron interactions in non-equilibrium bilayer graphene
• Gating monolayer and bilayer graphene with a two-dimensional semiconductor
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