Activation of magnetic moments in CVD-grown graphene by annealing
arXiv:2107.02824
Abstract
Effects of annealing on chemical vapor deposited graphene are investigated via a weak localization magnetoresistance measurement. Annealing at \SI{300}{\celsius} in inert gases, a common cleaning procedure for graphene devices, is found to raise the dephasing rate significantly above the rate from electron-electron interactions, which would otherwise be expected to dominate dephasing at 4 K and below. This extra dephasing is apparently induced by local magnetic moments activated by the annealing process, and depends strongly on the backgate voltage applied.
References in corpus (18)
- Boron nitride substrates for high-quality graphene electronics
- Magnetism in Graphene Induced by Single-Atom Defects
- Intrinsic Response of Graphene Vapor Sensors
- Weak localisation magnetoresistance and valley symmetry in graphene
- Weak localisation in graphene flakes
- Colloquium: Spintronics in graphene and other two-dimensional materials
- Raman spectroscopy as probe of nanometer-scale strain variations in graphene
- Spin Relaxation in Single Layer and Bilayer Graphene
- Linear scaling between momentum and spin scattering in graphene
- Spin relaxation mechanism in graphene: resonant scattering by magnetic impurities
- Random strain fluctuations as dominant disorder source for high-quality on-substrate graphene devices
- Defect-mediated spin relaxation and dephasing in graphene
- Electron-electron interactions in the conductivity of graphene
- Limitations to Carrier Mobility and Phase-Coherent Transport in Bilayer Graphene
- Rippled Graphene in an In-Plane Magnetic Field: Effects of a Random Vector Potential
- Interactions and magnetic moments near vacancies and resonant impurities in graphene
- Kondo effect due to a hydrogen impurity in graphene: a multichannel Kondo problem with diverging hybridization
- Asymmetric Electron-Hole Decoherence in Ion-Gated Epitaxial Graphene