Phase-space for the breakdown of the quantum Hall effect in epitaxial graphene

Abstract

We report the phase-space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30T. At 2K breakdown currents ($I_c$) almost two orders of magnitude greater than in GaAs devices are observed. The phase boundary of the dissipationless state (${\rho }_{xx}=0$) shows a (1-$(T/T_c{)}^2$) dependence and persists up to $T_c>45K$ at 29T. With magnetic field $I_c$ was found to increase $\propto B^{3/2}$ and $T_c\propto B^{1.88}$. As the Fermi energy approaches the Dirac point, the $\nu =2$ quantized Hall plateau appears continuously from fields as low as 1T up to at least 19T due to a strong magnetic field dependence of the carrier density.

References in corpus (9)

• Room-Temperature Quantum Hall Effect in Graphene
• Supercollision cooling in undoped graphene
• Charge transfer between epitaxial graphene and silicon carbide
• Encapsulation and Electronic Control of Epitaxial Graphene by Photosensitive Polymers and UV light
• Hot electron cooling by acoustic phonons in graphene
• Quantum-Hall activation gaps in graphene
• Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene
• Precision comparison of the quantum Hall effect in graphene and gallium arsenide
• Magneto-transport of graphene and quantum phase transitions in the quantum Hall regime

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