activity
20132025
most citedThe bright side of defects in MoS and WS and a generalizable chemical treatment protocol for defect passivation

112 citations · 295 across the 8 of their papers we have counts for

collaborators

9 papers

cond-mat.mtrl-sci2025★ 2 cited

The 2D Materials Roadmap

Wencai Ren, Peter Bøggild, Joan Redwing +70

Over the past two decades, 2D materials have rapidly evolved into a diverse and expanding family of material platforms. Many members of this materials class have demonstrated their…

cond-mat.mtrl-sci2020★ 23 cited

Oxidising and carburising catalyst conditioning for the controlled growth and transfer of large crystal monolayer hexagonal boron nitride

Vitaliy Babenko, Ye Fan, Vlad-Petru Veigang-Radulescu +9

Hexagonal boron nitride (h-BN) is well-established as a requisite support, encapsulant and barrier for 2D material technologies, but also recently as an active material for applica…

cond-mat.mtrl-sci2020

Giant Photoluminescence Enhancement in MoSe monolayers treated with Oleic Acid Ligands

Arelo O. A Tanoh, Jack Alexander-Webber, Ye Fan +6

The inherently low photoluminescence (PL) yields in as prepared transition metal dichalcogenide (TMD) monolayers are broadly accepted to be the result of atomic vacancies (i.e. def…

cond-mat.mtrl-sci2020★ 112 cited

The bright side of defects in MoS and WS and a generalizable chemical treatment protocol for defect passivation

Hope M. Bretscher, Zhaojun Li, James Xiao +12

Structural defects are widely regarded as detrimental to the optoelectronic properties of monolayer transition metal dichalcogenides, leading to concerted efforts to eliminate defe…

cond-mat.mes-hall2015

Independence of Optical Absorption on Auger Ionization in Single-Walled Carbon Nanotubes Revealed by Ultrafast e-h Photodoping

Mitchell D. Anderson, Meghan N. Beattie, Jack A. Alexander-Webber +2

Auger-ionized carriers in a one-dimensional semiconductor are predicted to result in a strong band-gap renormalization. Isolated single-walled carbon nanotubes (SWCNT) under high-i…

cond-mat.mes-hall2015★ 21 cited

Disorder induced Dirac-point physics in epitaxial graphene from temperature-dependent magneto-transport measurements

J. Huang, J. A. Alexander-Webber, A. M. R. Baker +8

We report a study of disorder effects on epitaxial graphene in the vicinity of the Dirac point by magneto-transport. Hall effect measurements show that the carrier density increase…

cond-mat.mes-hall2014★ 18 cited

Hot carrier relaxation of Dirac fermions in bilayer epitaxial graphene

J. Huang, J. A. Alexander-Webber, T. J. B. M. Janssen +8

Energy relaxation of hot Dirac fermions in bilayer epitaxial graphene is experimentally investigated by magnetotransport measurements on Shubnikov-de Haas oscillations and weak loc…

cond-mat.mes-hall2013★ 68 cited

Weak localization scattering lengths in epitaxial, and CVD graphene

A. M. R. Baker, J. A. Alexander-Webber, T. Altebaeumer +8

Weak localization in graphene is studied as a function of carrier density in the range from 1 x \,cm to 1.43 x \,cm using devices produced by epitax…

cond-mat.mes-hall2013★ 51 cited

Phase-space for the breakdown of the quantum Hall effect in epitaxial graphene

J. A. Alexander-Webber, A. M. R. Baker, T. J. B. M. Janssen +7

We report the phase-space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, an…