Exceptionally accurate large graphene quantum Hall arrays for the new SI

Abstract

The quantum Hall effect (QHE) is a cornerstone in the new International System of Units (SI), wherein the base units are derived from seven fundamental constants such as Planck's constant h and elementary charge e. Graphene has revolutionized practical resistance metrology by enabling the realization of quantized resistance h/2e^2 = 12.9... kOhm under relaxed experimental conditions. Looking ahead, graphene also has the potential to improve realizations of the electronic kilogram using the Kibble balance, and the quantum Ampere in wide current ranges. However, these prospects require different resistance values than practically achievable in single QHE devices, while also imposing stringent demands on energy dissipation in single QHE devices, ultimately requiring currents almost two orders of magnitude higher than the typical QHE breakdown currents IC ~ 100 uA achievable in graphene. Here we present unprecedented accuracy in the quantization of a record sized quantum Hall array (QHA), demonstrating RK/236 ~ 109 Ohm with 0.2 part-per-billion (nOhm/Ohm) accuracy with IC over 5 mA (~ 1 nOhm/Ohm accuracy for IC = 8.5 mA), using epitaxial graphene on silicon carbide (epigraphene). The array quantization accuracy, comparable to the most precise universality tests of QHE in single Hall bar devices, together with the scalability and reliability of this approach pave the road for superior realizations of three key units in the modern SI: the ohm, the ampere, and the kilogram.

arXiv commentMain text 12 pages, 4 figures.Supplementary information 4 pages, 4 figures

References in corpus (18)

• Room-Temperature Quantum Hall Effect in Graphene
• Quantum Resistance Standard Based on Epitaxial Graphene
• SiC Graphene Suitable For Quantum Hall Resistance Metrology
• Single-electron current sources: towards a refined definition of ampere
• Charge transfer between epitaxial graphene and silicon carbide
• Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene
• Uniform doping of graphene close to the charge neutrality point by polymer-assisted spontaneous assembly of molecular dopants
• Precision comparison of the quantum Hall effect in graphene and gallium arsenide
• Operation of graphene quantum Hall resistance standard in a cryogen-free table-top system
• Graphene, universality of the quantum Hall effect and redefinition of the SI system
• Phase-space for the breakdown of the quantum Hall effect in epitaxial graphene
• RK/100 and RK/200 Quantum Hall Array Resistance Standards
• Quantum resistance standard accuracy close to the zero-dissipation state
• The ampere and the electrical units in the quantum era
• Realization of 5 h/e^2 with graphene quantum Hall resistance array
• Cooling of chiral heat transport in the quantum Hall effect graphene
• Quantum mechanical current-to-voltage conversion with quantum Hall resistance array
• Scalable fabrication of edge contacts to 2D materials

Cited by in corpus (3)

• A primary quantum current standard based on the Josephson and the quantum Hall effects
• Robust quantum Hall resistance standard from uniform wafer-scale epitaxial graphene on SiC
• Pronounced scale-dependent charge carrier density in graphene quantum Hall devices