Scalable fabrication of edge contacts to 2D materials

Abstract

We present a fabrication method for reliably and reproducibly forming electrical contacts to 2D materials, based on the tri-layer resist system. We demonstrate the applicability of this method for epitaxial graphene on silicon carbide (epigraphene) and the transition metal dichalcogenides (TMDCs) molybdenum disulfide ($Mo{S}_2$). For epigraphene, the specific contact resistances are of the order of ${\rho }_c$ ~ $50$ $\Omega \mu m$, and follow the Landauer quantum limit, ${\rho }_c\propto n^{-1/2}$, with $n$ being the carrier density of graphene. For $Mo{S}_2$ flakes, our edge contacts enable field effect transistors (FET) with ON/OFF ratio of $>10^6$ at room temperature ( $>10^9$ at cryogenic temperatures). The fabrication route here demonstrated allows for contact metallization using thermal evaporation and also by sputtering, giving an additional flexibility when designing electrical interfaces, which is key in practical devices and when exploring the electrical properties of emerging materials.

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