Magneto-transport of graphene and quantum phase transitions in the quantum Hall regime

Abstract

We studied the magneto-transport in SiO2 substrate-supported monolayer graphene and the quantum phase transitions that characterize the quantum Hall regime, using magnetic fields up to 28T and temperatures down to 4K. The analysis of the temperature dependence of the Hall and longitudinal resistivity reveals new non-universalities of the critical exponents of the plateau-insulator transition. These exponent depends on the type of disorder that governs the electrical transport, which knowledge is important for the design and fabrication of new graphene nano-devices.

References in corpus (8)

• Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
• Unconventional Integer Quantum Hall effect in graphene
• Landau Level Splitting in Graphene in High Magnetic Fields
• The zero-energy state in graphene in a high magnetic field
• Dissipative Quantum Hall Effect in Graphene near the Dirac Point
• Critical exponent for the quantum Hall transition
• Divergent resistance at the Dirac point in graphene: Evidence for a transition in a high magnetic field
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Cited by in corpus (5)

• Phase-space for the breakdown of the quantum Hall effect in epitaxial graphene
• Dynamical optical conductivity for gapped $\alpha -{\mathcal{T}}_3$ materials with a curved "flat" band
• Experimental evidence for direct insulator-quantum Hall transition in multi-layer graphene
• Observation of quantum Hall plateau-plateau transition and scaling behavior of the zeroth Landau level in graphene p-n-p junctions
• Quasi-${\Phi }_0$-periodic supercurrent at quantum Hall transitions