Quantum Interference Noise Near the Dirac Point in Graphene
arXiv:1401.7370 · doi:10.1103/PhysRevB.89.235407
Abstract
Effects of disorder on the electronic transport properties of graphene are strongly affected by the Dirac nature of the charge carriers in graphene. This is particularly pronounced near the Dirac point, where relativistic charge carriers cannot efficiently screen the impurity potential. We have studied time-dependent conductance fluctuations and magnetoresistance in graphene in the close vicinity of the Dirac point. We show that the fluctuations are due to the quantum interference effects due to scattering on impurities, and find an unusually large reduction of the relative noise power in magnetic field, possibly indicating that an additional symmetry plays an important role in this regime.
4 pages, 4 figures
References in corpus (17)
- The electronic properties of graphene
- Weak localisation magnetoresistance and valley symmetry in graphene
- Strong suppression of weak (anti)localization in graphene
- Selective transmission of Dirac electrons and ballistic magnetoresistance of \textit{n-p} junctions in graphene
- Defect scattering in graphene
- Weak localisation in graphene flakes
- Electron transport in disordered graphene
- Intervalley scattering, long-range disorder, and effective time reversal symmetry breaking in graphene
- Evidence of the role of contacts on the observed electron-hole asymmetry in graphene
- Random resistor network model of minimal conductivity in graphene
- On electron (anti)localization in graphene
- Effect of Spatial Charge Inhomogeneity on 1/f Noise Behavior in Graphene
- Mesoscopic conductance fluctuations in graphene samples
- Quantum kinetic equation and universal conductance fluctuations in graphene
- Non-Ergodicity & Microscopic Symmetry Breaking of the Conductance Fluctuations in Disordered Mesoscopic Graphene
- Electronic coherence in metals: comparing weak localization and time-dependent conductance fluctuations
- Tuning of quantum interference in top-gated graphene on SiC