Quantum Hall Effects in Monolayer-Bilayer Graphene Planar Junctions

Abstract

The Hall resistance of a homogeneous electron system is well known to be anti-symmetric with respect to the magnetic field and the sign of charge carriers. We have observed that such symmetries no longer hold in planar hybrid structures consisting of partly single layer graphene (SLG) and partly bilayer graphene (BLG) in the quantum Hall (QH) regime. In particular, the Hall resistance (R12xy) across the SLG and BLG interface is observed to exhibit quantized plateaus that switch between those characteristic of SLG QH states and BLG QH states when either the sign of the charge carriers (controlled by a back gate) or the direction of the magnetic field is reversed. Simultaneously reversing both the carrier type and the magnetic field gives rise to the same quantized Hall resistances. The observed SLG-BLG interface QH states, with characteristic asymmetries with respect to the signs of carriers and magnetic field, are determined only by the chirality of the QH edge states and can be explained by a Landauer-Büttiker analysis applied to such graphene hybrid structures involving two regions of different Landau level (LL) structures.

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• Spatially resolving unconventional interface Landau quantization in a graphene monolayer-bilayer planar junction
• Magnetoelectronic and optical properties of nonuniform graphene nanoribbons
• Quantum transport across van der Waals domain walls in bilayer graphene
• Isolated and hybrid bilayer graphene rings
• Bilayer-induced asymmetric quantum Hall effect in epitaxial graphene
• Supercurrent reversal in Josephson junctions based on bilayer graphene flakes
• Thermal transport in van der Waals graphene/boron-nitride structure: a molecular dynamics study