activity
20092014
most citedEffect of oxygen plasma etching on graphene studied with Raman spectroscopy and electronic transport

262 citations · 709 across the 9 of their papers we have counts for

collaborators

9 papers

cond-mat.mtrl-sci2014★ 29 cited

Raman spectra and electron-phonon coupling in disordered graphene with gate-tunable doping

Isaac Childres, Luis A. Jauregui, Yong P. Chen

We report a Raman spectroscopy study of graphene field-effect transistors (GFET) with a controlled amount of defects introduced in graphene by exposure to electron-beam irradiation…

cond-mat.mes-hall2014★ 5 cited

Gate-tunable and high responsivity graphene phototransistors on undoped semiconductor substrates

Biddut K. Sarker, Isaac Childres, Edward Cazalas +2

Due to its high charge carrier mobility, broadband light absorption, and ultrafast carrier dynamics, graphene is a promising material for the development of high-performance photod…

cond-mat.mes-hall2014★ 68 cited

Topological insulator based spin valve devices: evidence for spin polarized transport of spin-momentum-locked topological surface states

Jifa Tian, Isaac Childres, Helin Cao +3

Spin-momentum helical locking is one of the most important properties of the nontrivial topological surface states (TSS) in 3D topological insulators (TI). It underlies the iconic…

hep-ex2014★ 12 cited

Planning the Future of U.S. Particle Physics (Snowmass 2013): Chapter 8: Instrumentation Frontier

M. Demarteau, R. Lipton, H. Nicholson +211

These reports present the results of the 2013 Community Summer Study of the APS Division of Particles and Fields ("Snowmass 2013") on the future program of particle physics in the…

cond-mat.mes-hall2013★ 24 cited

Quantum Hall Effects in Monolayer-Bilayer Graphene Planar Junctions

Jifa Tian, Yongjin Jiang, Isaac Childres +3

The Hall resistance of a homogeneous electron system is well known to be anti-symmetric with respect to the magnetic field and the sign of charge carriers. We have observed that su…

cond-mat.mtrl-sci2012★ 25 cited

AFM and Raman studies of topological insulator materials subject to argon plasma etching

Isaac Childres, Jifa Tian, Ireneusz Miotkowski +1

Plasma etching is an important tool in nano-device fabrication. We report a study on argon plasma etching of topological insulator materials Bi2Se3, Bi2Te3, Sb2Te3 and Bi2Te2Se usi…