Integrating Graphene into Semiconductor Fabrication Lines

Abstract

Electronic and photonic devices based on the two-dimensional material graphene have unique properties, leading to outstanding performance figures-of-merit. Mastering the integration of this new and unconventional material into an established semiconductor fabrication line represents a critical step for pushing it forward towards commercialization.

References in corpus (8)

• Universal Dynamic Conductivity and Quantized Visible Opacity of Suspended Graphene
• 2D materials and van der Waals heterostructures
• Image sensor array based on graphene-CMOS integration
• Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes
• Boron Nitride Substrates for High Mobility Chemical Vapor Deposited Graphene
• The role of contact resistance in graphene field-effect devices
• Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride
• Precision comparison of the quantum Hall effect in graphene and gallium arsenide

Cited by in corpus (27)

• 2D Materials for Future Heterogeneous Electronics
• Nanoelectromechanical Sensors based on Suspended 2D Materials
• Graphene ribbons with suspended masses as transducers in ultra-small nanoelectromechanical accelerometers
• Electrical tunability of terahertz nonlinearity in graphene
• Graphene-Quantum Dots Hybrid Photodetectors with Low Dark-Current Readout
• Suspended graphene membranes with attached silicon proof masses as piezoresistive NEMS accelerometers
• Scalable High-Mobility Graphene/hBN Heterostructures
• Wafer-scale graphene field-effect transistor biosensor arrays with monolithic CMOS readout
• Two-dimensional Platinum Diselenide Waveguide-Integrated Infrared Photodetectors
• Dependable contact related parameter extraction in graphene-metal junctions
• Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics
• Evidence for local spots of viscous electron flow in graphene at moderate mobility
• Experimental observation and modeling of the impact of traps on static and analog/HF performance of graphene transistors
• Graphene-based Wireless Agile Interconnects for Massive Heterogeneous Multi-chip Processors
• Exploiting ambipolarity in graphene field-effect transistors for novel designs on high-frequency analog electronics
• Plasma-enhanced atomic layer deposition of Al${}_2$O${}_3$ on graphene using monolayer hBN as interfacial layer
• Multifunctional magnetic oxide-MoS${}_2$ heterostructures on silicon
• Assessment of wafer-level transfer techniques of graphene with respect to semiconductor industry requirements
• Button Shear Testing for Adhesion Measurements of 2D Materials
• Universal Transceivers: Opportunities and Future Directions for the Internet of Everything (IoE)
• Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition
• Graphene-Quantum Dot Hybrid Photodetectors from 200 mm Wafer Scale Processing
• Tuning the doping of epitaxial graphene on a conventional semiconductor via substrate surface reconstruction
• Tracking interfacial changes of graphene/Ge(110) during in-vacuum annealing
• Measuring the Adhesion of Graphene Flake Networks via Button Shear Tests
• Wrinkle Mediated Phase Transitions in In${}_2$Se${}_3$
• Memristive, Spintronic, and 2D-Materials-Based Devices to Improve and Complement Computing Hardware