Precision Quantum Hall Resistance Measurement on Epitaxial Graphene Device in Low Magnetic Field

Abstract

Precision quantum Hall resistance (QHR) measurements were performed on large-area epitaxial graphene device at low magnetic fields (B = 2 T - 8 T) at temperature T = 1.5 K. Hall resistance was measured using Cryogenic Current Comparator resistance bridge with high biasing current Isd = 40 micro ampere. The results showed that at B = 8 T the relative deviation of Hall resistance from the expected quantized value h/2e2 is within experimental uncertainty of 3.5 parts in 108 and remained below 0.35 parts per million (ppm) down to B = 3 T.

References in corpus (6)

• Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
• Epitaxial graphene
• Encapsulation and Electronic Control of Epitaxial Graphene by Photosensitive Polymers and UV light
• Precision comparison of the quantum Hall effect in graphene and gallium arsenide
• Quantum resistance metrology in graphene
• Precision quantization of Hall resistance in transferred graphene

Cited by in corpus (10)

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• Operation of graphene quantum Hall resistance standard in a cryogen-free table-top system
• Towards a Graphene-Based Quantum Impedance Standard
• Mini array of quantum Hall devices based on epitaxial graphene
• Magnetoresistance of disordered graphene: from low to high temperatures
• Nonequilibrium mesoscopic conductance fluctuations as the origin of 1/f noise in epitaxial graphene
• Epigraphene : epitaxial graphene on silicon carbide
• Quantum Hall effect in epitaxial graphene with permanent magnets
• Graphene surpasses GaAs/AlGaAs for the application of the quantum Hall effect in metrology
• Pronounced scale-dependent charge carrier density in graphene quantum Hall devices