97 citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- Institute for Microelectronics and MicrosystemsIT3 papers
- Centre de Recherche sur l'Hétéro-Epitaxie et ses ApplicationsFR1 paper
- Centre National de la Recherche ScientifiqueFR1 paper
- Laboratoire Charles CoulombFR1 paper
- Laboratoire National de Métrologie et d'EssaisFR1 paper
- Laboratoire Photonique, Numérique et NanosciencesFR1 paper
- University of CataniaIT1 paper
- University of PalermoIT1 paper
4 papers
On the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy
P. Fiorenza, E. Schilirò, F. Giannazzo +4
The dielectric breakdown (BD) of thermal oxide (SiO2) grown on cubic silicon carbide (3C-SiC) was investigated comparing the electrical behavior of macroscopic metal-oxidesemicondu…
Impact of stacking faults and domain boundaries on the electronic transport in cubic silicon carbide probed by conductive atomic force microscopy
F. Giannazzo, G. Greco, S. Di Franco +8
In spite of its great promises for energy efficient power conversion, the electronic quality of cubic silicon carbide (3C-SiC) on silicon is currently limited by the presence of a…
Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon
Monia Spera, Giuseppe Greco, Raffaella Lo Nigro +5
This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-SiC) layers grown on silicon substrates. In particular, the morphological, electrical a…
Quantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide
F. Lafont, R. Ribeiro-Palau, D. Kazazis +9
Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within in relative value, but operating at lower magnetic field…