97 citations
- Institute for Microelectronics and MicrosystemsIT2 papers
- Centre de Recherche sur l'Hétéro-Epitaxie et ses ApplicationsFR1 paper
- Centre National de la Recherche ScientifiqueFR1 paper
- Laboratoire Charles CoulombFR1 paper
- Laboratoire National de Métrologie et d'EssaisFR1 paper
- Laboratoire Photonique, Numérique et NanosciencesFR1 paper
3 papers
physics.app-ph2020★ 10 cited
On the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy
P. Fiorenza, E. Schilirò, F. Giannazzo +4
The dielectric breakdown (BD) of thermal oxide (SiO2) grown on cubic silicon carbide (3C-SiC) was investigated comparing the electrical behavior of macroscopic metal-oxidesemicondu…
physics.app-ph2020★ 26 cited
Impact of stacking faults and domain boundaries on the electronic transport in cubic silicon carbide probed by conductive atomic force microscopy
F. Giannazzo, G. Greco, S. Di Franco +8
In spite of its great promises for energy efficient power conversion, the electronic quality of cubic silicon carbide (3C-SiC) on silicon is currently limited by the presence of a…
cond-mat.mes-hall2014★ 97 cited
Quantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide
F. Lafont, R. Ribeiro-Palau, D. Kazazis +9
Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within in relative value, but operating at lower magnetic field…