128 citations · 750 across the 30 of their papers we have counts for
30 papers
Impact of the NO annealing duration on the SiO2/4H-SiC interface properties in lateral MOSFETs: the energetic profile of the near-interface-oxide traps
Patrick Fiorenza, Marco Zignale, Marco Camalleri +5
In this work, the effects of the duration of the post deposition annealing (PDA) in nitric oxide (NO) on the properties of SiO2/4H-SiC interfaces in n-channel lateral MOSFETs are i…
Time Dependent Dielectric Breakdown in 4H-SiC power MOSFETs under positive and negative gate-bias and gate-current stresses at 200°C
P. Fiorenza, F. Cordiano, S. M. Alessandrino +6
The gate oxide lifetime in 4H-SiC power MOSFETs is typically assessed at fixed and constant gate bias stress, monitoring the time-dependent dielectric breakdown (TDDB).
Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy
Patrick Fiorenza, Marco Zignale, Edoardo. Zanetti +6
This paper reports the results presented in an invited poster during the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2023 held in Sorrento, Italy. Th…
Atomic resolution interface structure and vertical current injection in highly uniform heterojunctions with bulk GaN
F. Giannazzo, S. E. Panasci, E. Schilirò +11
The integration of two-dimensional with recently attracted significant interest for future electronic/optoelectronic applications. However, the reported studies hav…
Direct atomic layer deposition of ultra-thin and films on gold-supported monolayer
E. Schilirò, S. E. Panasci, A. M. Mio +9
In this paper, the atomic layer deposition (ALD) of ultra-thin films (<4 nm) of and on Au-supported monolayer (1L) is investigated, providing an i…
Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates
Giuseppe Greco, Patrick Fiorenza, Emanuela Schilirò +9
In this paper, the Ni Schottky barrier on GaN epilayer grown on free standing substrates has been characterized. First, transmission electrical microscopy (TEM) images and nanoscal…