128 citations · 750 across the 30 of their papers we have counts for
15 papers · 1 filter
Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations
Patrick Fiorenza, Corrado Bongiorno, Filippo Giannazzo +4
In this paper, SiO2 layers deposited on 4H-SiC and subjected to different post deposition annealing (PDA) in NO and N2O were studied to identify the key factors influencing the cha…
Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition
F. Giannazzo, R. Dagher, E. Schilirò +8
The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we d…
Nanoscale insights on the origin of the Power MOSFETs breakdown after extremely long high temperature reverse bias stress
P. Fiorenza, M. Alessandrino, B. Carbone +8
In this work, the origin of the dielectric breakdown of 4H-SiC power MOSFETs was studied at the nanoscale, analyzing devices that failed after extremely long (three months) of high…
Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress
P. Fiorenza, M. Alessandrino, B. Carbone +7
The origin of dielectric breakdown was studied on 4H-SiC MOSFETs that failed after three months of high temperature reverse bias (HTRB) stress. A local inspection of the failed dev…
Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene
E. Schilirò, R. Lo Nigro, S. E. Panasci +5
In this work, the nucleation and growth mechanism of aluminum oxide (Al2O3) in the early stages of the direct atomic layer deposition (ALD) on monolayer epitaxial graphene (EG) on…
Thermal Annealing Effect on Electrical and Structural Properties of Tungsten Carbide Schottky Contacts on AlGaN/GaN heterostructures
Giuseppe Greco, Salvatore Di Franco, Corrado Bongiorno +4
Tungsten carbide (WC) contacts have been investigated as a novel gold-free Schottky metallization for AlGaN/GaN heterostructures. The evolution of the electrical and structural/com…
Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC
Marilena Vivona, Giuseppe Greco, Gabriele Bellocchi +5
In this paper, the electrical behavior of tungsten carbide (WC) Schottky barrier on 4H-SiC was investigated. First, a statistical current-voltage (I-V) analysis in forward bias, pe…
On the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy
P. Fiorenza, E. Schilirò, F. Giannazzo +4
The dielectric breakdown (BD) of thermal oxide (SiO2) grown on cubic silicon carbide (3C-SiC) was investigated comparing the electrical behavior of macroscopic metal-oxidesemicondu…
Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO/4H-SiC MOSFETs
Patrick Fiorenza, Filippo Giannazzo, Mario Saggio +1
A non-relaxing method based on cyclic gate bias stress is used to probe the interface or near-interface traps in the SiO/4H-SiC system over the whole 4H-SiC band gap. The tempe…
Processing issues in SiC and GaN power devices technology: the cases of 4H-SiC planar MOSFET and recessed hybrid GaN MISHEMT
Fabrizio Roccaforte, Giuseppe Greco, Patrick Fiorenza
This paper aims to give a short overview on some relevant processing issues existing in SiC and GaN power devices technology. The main focus is put on the importance of the channel…
Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
Raffaella Lo Nigro, Emanuela Schilirò, Patrick Fiorenza +1
Nanolaminated Al2O3/HfO2 thin films as well as single Al2O3 and HfO2 layers have been grown as gate dielectrics by Plasma Enhanced Atomic Layer Deposition (PEALD) technique on sili…
Impact of stacking faults and domain boundaries on the electronic transport in cubic silicon carbide probed by conductive atomic force microscopy
F. Giannazzo, G. Greco, S. Di Franco +8
In spite of its great promises for energy efficient power conversion, the electronic quality of cubic silicon carbide (3C-SiC) on silicon is currently limited by the presence of a…
Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis
Patrick Fiorenza, Ferdinando Iucolano, Giuseppe Nicotra +7
Studying the electrical and structural properties of the interface of the gate oxide (SiO2) with silicon carbide (4H-SiC) is a fundamental topic, with important implications for un…
Effect of high temperature annealing (T > 1650°C) on the morphological and electrical properties of p-type implanted 4H-SiC layers
Monia Spera, Domenico Corso, Salvatore Di Franco +5
This work reports on the effect of high temperature annealing on the electrical properties of p-type implanted 4H-SiC. Ion implantations of Aluminium (Al) at different energies (30…
Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon
Monia Spera, Giuseppe Greco, Raffaella Lo Nigro +5
This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-SiC) layers grown on silicon substrates. In particular, the morphological, electrical a…