128 citations · 750 across the 30 of their papers we have counts for
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Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering
P. Fiorenza, M. Vivona, S. Di Franco +5
In this work, the electrical properties of Al2O3 films deposited by reactive ion sputtering were investigated by means of morphological, chemical and electrical characterizations.…
Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC
S. Rascunà, P. Badalà, C. Tringali +8
This work reports on the morphological and electrical properties of Ni-based back-side Ohmic contacts formed by laser annealing process for SiC power diodes. Nickel films, 100 nm t…
Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors
Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano +6
This paper reports on the physical and temperature-dependent electrical characterizations of the oxide/semiconductor interface in MOS capacitors with a SiO2 layer deposited on 4H-S…