activity
20192023
most citedStrain, doping and electronic transport of large area monolayer MoS2 exfoliated on gold and transferred to an insulating substrate

128 citations · 393 across the 13 of their papers we have counts for

collaborators

13 papers

cond-mat.mtrl-sci2023★ 26 cited

Atomic resolution interface structure and vertical current injection in highly uniform heterojunctions with bulk GaN

F. Giannazzo, S. E. Panasci, E. Schilirò +11

The integration of two-dimensional with recently attracted significant interest for future electronic/optoelectronic applications. However, the reported studies hav…

cond-mat.mtrl-sci2023

Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates

Giuseppe Greco, Patrick Fiorenza, Emanuela Schilirò +9

In this paper, the Ni Schottky barrier on GaN epilayer grown on free standing substrates has been characterized. First, transmission electrical microscopy (TEM) images and nanoscal…

physics.app-ph2022★ 46 cited

Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs

Giuseppe Greco, Patrick Fiorenza, Filippo Giannazzo +6

In this work, the threshold voltage instability of normally-off p-GaN high electron mobility transistors (HEMTs) has been investigated by monitoring the gate current density during…

cond-mat.mtrl-sci2021★ 128 cited

Strain, doping and electronic transport of large area monolayer MoS2 exfoliated on gold and transferred to an insulating substrate

S. E. Panasci, E. Schilirò, G. Greco +5

Gold-assisted mechanical exfoliation currently represents a promising method to separate ultra-large (cm-scale) transition metal dichalcogenides (TMDs) monolayers (1L) with excelle…

cond-mat.mtrl-sci2021★ 17 cited

Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC

Marilena Vivona, Giuseppe Greco, Monia Spera +4

The electrical behavior of Ni Schottky barrier formed onto heavily doped (ND>1019 cm-3) n-type phosphorous implanted silicon carbide (4H-SiC) was investigated, with a focus on the…

cond-mat.mtrl-sci2020★ 11 cited

Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition

F. Giannazzo, R. Dagher, E. Schilirò +8

The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we d…