most citedMorphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC

44 citations · 92 across the 4 of their papers we have counts for

collaborators

4 papers

physics.app-ph202011 cited

Thermal Annealing Effect on Electrical and Structural Properties of Tungsten Carbide Schottky Contacts on AlGaN/GaN heterostructures

Giuseppe Greco, Salvatore Di Franco, Corrado Bongiorno +4

Tungsten carbide (WC) contacts have been investigated as a novel gold-free Schottky metallization for AlGaN/GaN heterostructures. The evolution of the electrical and structural/com…

physics.app-ph202011 cited

Processing issues in SiC and GaN power devices technology: the cases of 4H-SiC planar MOSFET and recessed hybrid GaN MISHEMT

Fabrizio Roccaforte, Giuseppe Greco, Patrick Fiorenza

This paper aims to give a short overview on some relevant processing issues existing in SiC and GaN power devices technology. The main focus is put on the importance of the channel…

physics.app-ph202026 cited

Impact of stacking faults and domain boundaries on the electronic transport in cubic silicon carbide probed by conductive atomic force microscopy

F. Giannazzo, G. Greco, S. Di Franco +8

In spite of its great promises for energy efficient power conversion, the electronic quality of cubic silicon carbide (3C-SiC) on silicon is currently limited by the presence of a…

physics.app-ph201944 cited

Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC

S. Rascunà, P. Badalà, C. Tringali +8

This work reports on the morphological and electrical properties of Ni-based back-side Ohmic contacts formed by laser annealing process for SiC power diodes. Nickel films, 100 nm t…