128 citations · 393 across the 13 of their papers we have counts for
7 papers · 1 filter
Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition
F. Giannazzo, R. Dagher, E. Schilirò +8
The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we d…
Thermal Annealing Effect on Electrical and Structural Properties of Tungsten Carbide Schottky Contacts on AlGaN/GaN heterostructures
Giuseppe Greco, Salvatore Di Franco, Corrado Bongiorno +4
Tungsten carbide (WC) contacts have been investigated as a novel gold-free Schottky metallization for AlGaN/GaN heterostructures. The evolution of the electrical and structural/com…
Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC
Marilena Vivona, Giuseppe Greco, Gabriele Bellocchi +5
In this paper, the electrical behavior of tungsten carbide (WC) Schottky barrier on 4H-SiC was investigated. First, a statistical current-voltage (I-V) analysis in forward bias, pe…
Processing issues in SiC and GaN power devices technology: the cases of 4H-SiC planar MOSFET and recessed hybrid GaN MISHEMT
Fabrizio Roccaforte, Giuseppe Greco, Patrick Fiorenza
This paper aims to give a short overview on some relevant processing issues existing in SiC and GaN power devices technology. The main focus is put on the importance of the channel…
Impact of stacking faults and domain boundaries on the electronic transport in cubic silicon carbide probed by conductive atomic force microscopy
F. Giannazzo, G. Greco, S. Di Franco +8
In spite of its great promises for energy efficient power conversion, the electronic quality of cubic silicon carbide (3C-SiC) on silicon is currently limited by the presence of a…
Effect of high temperature annealing (T > 1650°C) on the morphological and electrical properties of p-type implanted 4H-SiC layers
Monia Spera, Domenico Corso, Salvatore Di Franco +5
This work reports on the effect of high temperature annealing on the electrical properties of p-type implanted 4H-SiC. Ion implantations of Aluminium (Al) at different energies (30…