48 citations · 288 across the 14 of their papers we have counts for
14 papers
Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates
Giuseppe Greco, Patrick Fiorenza, Emanuela Schilirò +9
In this paper, the Ni Schottky barrier on GaN epilayer grown on free standing substrates has been characterized. First, transmission electrical microscopy (TEM) images and nanoscal…
Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs
Giuseppe Greco, Patrick Fiorenza, Filippo Giannazzo +6
In this work, the threshold voltage instability of normally-off p-GaN high electron mobility transistors (HEMTs) has been investigated by monitoring the gate current density during…
Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations
Patrick Fiorenza, Corrado Bongiorno, Filippo Giannazzo +4
In this paper, SiO2 layers deposited on 4H-SiC and subjected to different post deposition annealing (PDA) in NO and N2O were studied to identify the key factors influencing the cha…
Inter-diffusion, melting and reaction interplay in Ni/4H-SiC under excimer laser annealing
Salvatore Sanzaro, Corrado Bongiorno, Paolo Badalà +5
We investigated the complex interaction between a nickel layer and a 4H-SiC substrate under UV-laser irradiation since the early stages of the atomic inter-diffusion. An exhaustive…
Nanoscale insights on the origin of the Power MOSFETs breakdown after extremely long high temperature reverse bias stress
P. Fiorenza, M. Alessandrino, B. Carbone +8
In this work, the origin of the dielectric breakdown of 4H-SiC power MOSFETs was studied at the nanoscale, analyzing devices that failed after extremely long (three months) of high…
On the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy
P. Fiorenza, E. Schilirò, F. Giannazzo +4
The dielectric breakdown (BD) of thermal oxide (SiO2) grown on cubic silicon carbide (3C-SiC) was investigated comparing the electrical behavior of macroscopic metal-oxidesemicondu…