activity
20192021
most citedMorphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC

44 citations · 266 across the 11 of their papers we have counts for

collaborators

17 papers

cond-mat.mtrl-sci202137 cited

Substrate impact on the thickness dependence of vibrational and optical properties of large area produced by gold-assisted exfoliation

S. E. Panasci, E. Schilirò, F. Migliore +5

The gold-assisted exfoliation is a very effective method to produce large-area (-scale) membranes of molybdenum disulfide () for electronics. However, the strong $MoS_…

physics.app-ph2021

Direct atomic layer deposition of ultrathin aluminium oxide on monolayer exfoliated on gold: the role of the substrate

Emanuela Schilirò, Raffaella Lo Nigro, Salvatore E. Panasci +5

In this paper we demonstrated the thermal Atomic Layer Deposition (ALD) growth at 250 °C of highly homogeneous and ultra-thin ( 3.6 nm) films with excellent insu…

cond-mat.mtrl-sci2021

Strain, doping and electronic transport of large area monolayer MoS2 exfoliated on gold and transferred to an insulating substrate

S. E. Panasci, E. Schilirò, G. Greco +5

Gold-assisted mechanical exfoliation currently represents a promising method to separate ultra-large (cm-scale) transition metal dichalcogenides (TMDs) monolayers (1L) with excelle…

cond-mat.mtrl-sci2021

Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC

Marilena Vivona, Giuseppe Greco, Monia Spera +4

The electrical behavior of Ni Schottky barrier formed onto heavily doped (ND>1019 cm-3) n-type phosphorous implanted silicon carbide (4H-SiC) was investigated, with a focus on the…

cond-mat.mtrl-sci2020

Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations

Patrick Fiorenza, Corrado Bongiorno, Filippo Giannazzo +4

In this paper, SiO2 layers deposited on 4H-SiC and subjected to different post deposition annealing (PDA) in NO and N2O were studied to identify the key factors influencing the cha…

cond-mat.mtrl-sci2020

Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition

F. Giannazzo, R. Dagher, E. Schilirò +8

The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we d…