26 citations · 57 across the 6 of their papers we have counts for
6 papers
Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET
Massimo Zimbone, Nicolo Piluso, Grazia Litrico +6
Thermal annealing plays a crucial role for healing the defectiveness in the ion implanted regions of DIMOSFETs (Double Implanted MOSFETs) devices. In this work, we have studied the…
NURE: An ERC project to study nuclear reactions for neutrinoless double beta decay
M. Cavallaro, E. Aciksoz, L. Acosta +71
Neutrinoless double beta decay (0ν\b{eta}\b{eta}) is considered the best potential resource to determine the absolute neutrino mass scale. Moreover, if observed, it will signal tha…
Simulation of the growth kinetics in group IV compound semiconductors
A. La Magna, A. Alberti, E. Barbagiovanni +5
We present a stochastic simulation method designed to study at an atomic resolution the growth kinetics of compounds characterized by the sp3-type bonding symmetry. Formalization a…
Impact of stacking faults and domain boundaries on the electronic transport in cubic silicon carbide probed by conductive atomic force microscopy
F. Giannazzo, G. Greco, S. Di Franco +8
In spite of its great promises for energy efficient power conversion, the electronic quality of cubic silicon carbide (3C-SiC) on silicon is currently limited by the presence of a…
Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon
Monia Spera, Giuseppe Greco, Raffaella Lo Nigro +5
This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-SiC) layers grown on silicon substrates. In particular, the morphological, electrical a…
Correlation between microstructure deflections and film/substrate curvature under generalized stress fields
Massimo Camarda, Ruggero Anzalone, Giuseppe D'Arrigo +5
In this article we develop an analytical theory that correlates the macroscopic curvature of stressed film/substrate systems with the microscopic in-plane and out-of-plane deflecti…