activity
19982023
most citedQuantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide

97 citations · 492 across the 41 of their papers we have counts for

collaborators

41 papers

cond-mat.mes-hall2023★ 4 cited

Disorder-induced phase transitions in double HgTe quantum wells

S. S. Krishtopenko, A. V. Ikonnikov, B. Jouault +1

By using the self-consistent Born approximation, we investigate topological phase transitions in double HgTe quantum wells (QWs) induced by the short-range impurities. Following th…

cond-mat.mes-hall2023★ 3 cited

Gate tunable terahertz cyclotron emission from two-dimensional Dirac fermions

B. Benhamou-Bui, C. Consejo, S. S. Krishtopenko +15

Two-dimensional Dirac fermions in HgTe quantum wells close to the topological phase transition can generate significant cyclotron emission that is magnetic field tunable in the Ter…

cond-mat.mes-hall2023★ 16 cited

Terahertz cyclotron emission from two-dimensional Dirac fermions

S. Gebert, C. Consejo, S. S. Krishtopenko +13

Since the emergence of graphene, we have seen several proposals for the realization of Landau lasers tunable over the terahertz frequency range. The hope was that the non-equidista…

cond-mat.mtrl-sci2022★ 9 cited

Temperature Dependent Zero-Field Splittings in Graphene

C. Bray, K. Maussang, C. Consejo +15

Graphene is a quantum spin Hall insulator with a 45 eV wide non-trivial topological gap induced by the intrinsic spin-orbit coupling. Even though this zero-field spin splitting…

cond-mat.quant-gas2022

Electrical control of excitons in GaN/(Al,Ga)N quantum wells

R. Aristegui, F. Chiaruttini, B. Jouault +7

A giant built-in electric field in the growth direction makes excitons in wide GaN/(Al, Ga)N quantum wells spatially indirect even in the absence of any external bias. Significant…

cond-mat.mes-hall2022

Large inverted band-gap in strained three-layer InAs/GaInSb quantum wells

C. Avogadri, S. Gebert, S. S. Krishtopenko +17

Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a b…