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B. Jouault

3 papers here

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author1
  • last author1

Across the 2 of 3 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall3
ORCID 0000-0002-2993-6916
same name
  • B. Jouault — 41 papers, h 16
  • B. Jouault — 7 papers, h 2
  • B. Jouault — 3 papers, h 6

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20182022
most citedMassless Dirac fermions in III-V semiconductor quantum wells

27 citations · 35 across the 3 of their papers we have counts for

collaborators

3 papers

cond-mat.mes-hall2022

Large inverted band-gap in strained three-layer InAs/GaInSb quantum wells

C. Avogadri, S. Gebert, S. S. Krishtopenko +17

Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a b…

cond-mat.mes-hall2019★ 8 cited

Thermal transport driven by charge imbalance in graphene in magnetic field, close to the charge neutrality point at low temperature: Non local resistance

A. Tagliacozzo, G. Campagnano, D. Giuliano +2

Graphene grown epitaxially on SiC, close to the charge neutrality point (CNP), in an orthogonal magnetic field shows an ambipolar behavior of the transverse resistance accompanied…

cond-mat.mes-hall2018★ 27 cited

Massless Dirac fermions in III-V semiconductor quantum wells

S. S. Krishtopenko, W. Desrat, K. E. Spirin +12

We report on the clear evidence of massless Dirac fermions in two-dimensional system based on III-V semiconductors. Using a gated Hall bar made on a three-layer InAs/GaSb/InAs quan…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.