Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics

Abstract

Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising realization of dipolar excitons. We demonstrate the in-plane confinement and cooling of these excitons, when trapped in the electrostatic potential created by semitransparent electrodes of various shapes deposited on the sample surface. This result is a prerequisite for the electrical control of the exciton densities and fluxes, as well for studies of the complex phase diagram of these dipolar bosons at low temperature.

20 pages, 4 figures

References in corpus (4)

• Observation of Long-Lived Interlayer Excitons in Monolayer MoSe2-WSe2 Heterostructures
• Analysis of the exciton-exciton interaction in semiconductor quantum wells
• Localization-Delocalization Transition of Indirect Excitons in Lateral Electrostatic Lattices
• Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells