27 citations · 116 across the 11 of their papers we have counts for
11 papers
Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: influence on indirect exciton diffusion
Benjamin Damilano, Rémi Aristégui, Henryk Teisseyre +8
GaN/AlxGa1-xN quantum wells were grown by molecular beam epitaxy on high quality bulk (0001) GaN substrates. The quantum well thickness was set in the 6-8 nm range to favor the pho…
Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layered graphene and nickel/gold films
R. Aristegui, P. Lefebvre, C. Brimont +9
Excitons hosted by GaN/(Al,Ga)N quantum wells (QWs) are spatially indirect due to the giant built-in electric field that separates electrons and holes along the growth direction. T…
Exciton dynamics in CdTe/CdZnTe quantum well
A. V. Mikhailov, A. S. Kurdyubov, E. S. Khramtsov +6
Exciton energy structure and population dynamics in a wide CdTe/CdZnTe quantum well are studied by spectrally-resolved pump-probe spectroscopy. Multiple excitonic resonances in ref…
Electrical control of excitons in GaN/(Al,Ga)N quantum wells
R. Aristegui, F. Chiaruttini, B. Jouault +7
A giant built-in electric field in the growth direction makes excitons in wide GaN/(Al, Ga)N quantum wells spatially indirect even in the absence of any external bias. Significant…
Complexity of dipolar exciton Mott transition in GaN/(AlGa)N nanostructures
F. Chiaruttini, T. Guillet, C. Brimont +6
The Mott transition from a dipolar excitonic liquid to an electron-hole plasma is demonstrated in a wide GaN/(Al,Ga)N quantum well at K by means of spatially-resolved magneto-…
Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics
F. Chiaruttini, T. Guillet, C. Brimont +6
Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising…
Complexes of dipolar excitons in layered quasi-two-dimensional nanostructures
Igor V. Bondarev, Maria R. Vladimirova
We discuss neutral and charged complexes (biexciton and trion) formed by indirect excitons in layered quasi-two-dimensional semiconductor heterostructures. Indirect excitons -- lon…
Influence of magnetic quantum confined Stark effect on the spin lifetime of indirect excitons
P. Andreakou, A. V. Mikhailov, S. Cronenberger +7
We report on the unusual and counter-intuitive behaviour of spin lifetime of excitons in coupled semiconductor quantum wells (CQWs) in the presence of in-plane magnetic field. Inst…
Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells
F. Fedichkin, P. Andreakou, B. Jouault +8
We investigate the transport of dipolar indirect excitons along the growth plane of polar (Al,Ga)N/GaN quantum well structures by means of spatially- and time-resolved photolumines…
Nonlinear optical spectroscopy of indirect excitons in biased coupled quantum wells
P. Andreakou, S. Cronenberger, D. Scalbert +9
Indirect excitons in coupled quantum wells are long-living quasi-particles, explored in the studies of collective quantum states. We demonstrate, that despite the extremely low osc…
Nonlinear Optical Probe of Indirect Excitons
A. V. Nalitov, M. Vladimirova, A. V. Kavokin +2
We propose the application of nonlinear optics for studies of spatially indirect excitons in coupled quantum wells. We demonstrate, that despite their vanishing oscillator strength…