Transport of indirect excitons in ZnO quantum wells
arXiv:1503.03089 · doi:10.1364/OL.40.003667
Abstract
We report on spatially- and time-resolved emission measurements and observation of transport of indirect excitons in ZnO/MgZnO wide single quantum wells.
References in corpus (5)
- High-temperature superfluidity with indirect excitons in van der Waals heterostructures
- Drift mobility of long-living excitons in coupled GaAs quantum wells
- Optically Controlled Excitonic Transistor
- Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells
- Nanoscale Transport of Surface Excitons at the Interface between ZnO and a Molecular Monolayer
Cited by in corpus (6)
- Indirect excitons in van der Waals heterostructures at room temperature
- Room-temperature transport of indirect excitons in (Al,Ga)N/GaN quantum wells
- Measurement of exciton correlations using electrostatic lattices
- High-mobility indirect excitons in wide single quantum well
- Pressure-dependent bandgap study of MBE grown {CdO/MgO} short period SLs using diamond anvil cell
- Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics