activity
20122023
most citedTuning the electromagnetic local density of states in graphene-covered systems via strong coupling with graphene plasmons

76 citations · 181 across the 8 of their papers we have counts for

collaborators

8 papers

cond-mat.quant-gas2023

Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layered graphene and nickel/gold films

R. Aristegui, P. Lefebvre, C. Brimont +9

Excitons hosted by GaN/(Al,Ga)N quantum wells (QWs) are spatially indirect due to the giant built-in electric field that separates electrons and holes along the growth direction. T…

cond-mat.mtrl-sci2023★ 26 cited

Atomic resolution interface structure and vertical current injection in highly uniform heterojunctions with bulk GaN

F. Giannazzo, S. E. Panasci, E. Schilirò +11

The integration of two-dimensional with recently attracted significant interest for future electronic/optoelectronic applications. However, the reported studies hav…

cond-mat.mtrl-sci2023

Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates

Giuseppe Greco, Patrick Fiorenza, Emanuela Schilirò +9

In this paper, the Ni Schottky barrier on GaN epilayer grown on free standing substrates has been characterized. First, transmission electrical microscopy (TEM) images and nanoscal…

cond-mat.quant-gas2022

Electrical control of excitons in GaN/(Al,Ga)N quantum wells

R. Aristegui, F. Chiaruttini, B. Jouault +7

A giant built-in electric field in the growth direction makes excitons in wide GaN/(Al, Ga)N quantum wells spatially indirect even in the absence of any external bias. Significant…

physics.app-ph2019

Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics

F. Chiaruttini, T. Guillet, C. Brimont +6

Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising…

cond-mat.mtrl-sci2014★ 25 cited

Highly resistive epitaxial Mg-doped GdN thin films

C. -M. Lee, H. Warring, S. Vézian +7

We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional doping with magnesium. Mg-doped GdN layers with resistivities of 1000 Ω.cm and carrier con…

cond-mat.mes-hall2012★ 76 cited

Tuning the electromagnetic local density of states in graphene-covered systems via strong coupling with graphene plasmons

Riccardo Messina, Jean-Paul Hugonin, Jean-Jacques Greffet +6

It is known that the near-field spectrum of the local density of states of the electromagnetic field above a SiC/air interface displays an intense narrow peak due to the presence o…

cond-mat.str-el2012★ 54 cited

The role of magnetic polarons in ferromagnetic GdN

Franck Natali, Ben Ruck, Joe Trodahl +6

We report an interplay between magnetism and charge transport in the ferromagnetic semiconductor GdN, pointing to the formation of magnetic polarons centred on nitrogen vacancies.…