activity
20022019
most citedQuantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide

97 citations · 385 across the 15 of their papers we have counts for

collaborators

15 papers

physics.ins-det2019★ 2 cited

A resistance bridge based on a cryogenic current comparator achieving sub- measurement uncertainties

W. Poirier, D. Leprat, F. Schopfer

A new resistance bridge has been built at the Laboratoire national de métrologie et d'essais (LNE) to improve the ohm realization in the (SI) of units from…

physics.ins-det2016★ 39 cited

Practical quantum realization of the ampere from the electron charge

J. Brun-Picard, S. Djordjevic, D. Leprat +2

One major change of the future revision of the International System of Units (SI) is a new definition of the ampere based on the elementary charge \emph{e}. Replacing the former de…

cond-mat.mes-hall2015★ 2 cited

Graphene surpasses GaAs/AlGaAs for the application of the quantum Hall effect in metrology

R. Ribeiro-Palau, F. Lafont, J. Brun-Picard +8

The quantum Hall effect (QHE) theoretically provides a universal standard of electrical resistance in terms of the Planck constant and the electron charge . In graphene, the…

cond-mat.mes-hall2014★ 97 cited

Quantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide

F. Lafont, R. Ribeiro-Palau, D. Kazazis +9

Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within in relative value, but operating at lower magnetic field…

cond-mat.mes-hall2014★ 25 cited

Anomalous dissipation mechanism and Hall quantization limit in polycrystalline graphene grown by chemical vapor deposition

F. Lafont, R. Ribeiro-Palau, Z. Han +8

We report on the observation of strong backscattering of charge carriers in the quantum Hall regime of polycrystalline graphene grown by chemical vapor deposition, which alters the…

cond-mat.mes-hall2014

High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen

E. Pallecchi, F. Lafont, V. Cavaliere +4

We investigate the magneto-transport properties of epitaxial graphene single-layer on 4H-SiC(0001), grown by atmospheric pressure graphitization in Ar, followed by H2 intercalation…