97 citations · 385 across the 15 of their papers we have counts for
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cond-mat.mes-hall2014★ 97 cited
Quantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide
F. Lafont, R. Ribeiro-Palau, D. Kazazis +9
Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within in relative value, but operating at lower magnetic field…
cond-mat.mes-hall2014★ 25 cited
Anomalous dissipation mechanism and Hall quantization limit in polycrystalline graphene grown by chemical vapor deposition
F. Lafont, R. Ribeiro-Palau, Z. Han +8
We report on the observation of strong backscattering of charge carriers in the quantum Hall regime of polycrystalline graphene grown by chemical vapor deposition, which alters the…
cond-mat.mes-hall2014
High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen
E. Pallecchi, F. Lafont, V. Cavaliere +4
We investigate the magneto-transport properties of epitaxial graphene single-layer on 4H-SiC(0001), grown by atmospheric pressure graphitization in Ar, followed by H2 intercalation…