Gate-tunable proximity effects in graphene on layered magnetic insulators
arXiv:2206.06949 · doi:10.1021/acs.nanolett.2c02931
Abstract
The extreme versatility of two-dimensional van der Waals (vdW) materials derives from their ability to exhibit new electronic properties when assembled in proximity with dissimilar crystals. For example, although graphene is inherently non-magnetic, recent work has reported a magnetic proximity effect in graphene interfaced with magnetic substrates, potentially enabling a pathway towards achieving a high-temperature quantum anomalous Hall effect. Here, we investigate heterostructures of graphene and chromium trihalide magnetic insulators (CrI, CrBr, and CrCl). Surprisingly, we are unable to detect a magnetic exchange field in the graphene, but instead discover proximity effects featuring unprecedented gate-tunability. The graphene becomes highly hole-doped due to charge transfer from the neighboring magnetic insulator, and further exhibits a variety of atypical transport features. These include highly extended quantum Hall plateaus, abrupt reversals in the Landau level filling sequence, and hysteresis over at least days-long time scales. In the case of CrI, we are able to completely suppress the charge transfer and all attendant atypical transport effects by gating. The charge transfer can additionally be altered in a first-order phase transition upon switching the magnetic states of the nearest CrI layers. Our results provide a roadmap for exploiting the magnetic proximity effect in graphene, and motivate further experiments with other magnetic insulators.
arXiv comment24 pages, 22 figures
References in corpus (28)
- Layer-dependent Ferromagnetism in a van der Waals Crystal down to the Monolayer Limit
- Quantum Anomalous Hall Effect in Graphene from Rashba and Exchange Effects
- Very Large Tunneling Magnetoresistance in Layered Magnetic Semiconductor CrI
- Proximity-induced ferromagnetism in graphene revealed by anomalous Hall effect
- Spin-Orbit Proximity Effect in Graphene
- SiC Graphene Suitable For Quantum Hall Resistance Metrology
- Quantum Resistance Standard Based on Epitaxial Graphene
- Quantum Anomalous Hall Effect in Graphene Proximity Coupled to an Antiferromagnetic Insulator
- Strong interface-induced spin-orbit coupling in graphene on WS2
- Direct photoluminescence probing of ferromagnetism in monolayer two-dimensional CrBr3
- Atomically Thin CrCl3: An in-Plane Layered Antiferromagnetic Insulator
- Strong interfacial exchange field in the graphene/EuS heterostructure
- Layer-Resolved Magnetic Proximity Effect in van der Waals Heterostructures
- Spin-orbit driven band inversion in bilayer graphene by van der Waals proximity effect
- Raman Spectroscopy, Photocatalytic Degradation and Stabilization of Atomically Thin Chromium Triiodide
- Strong magnetization and Chern insulators in compressed graphene/CrI van der Waals heterostructures
- Tunable spin-orbit coupling and symmetry-protected edge states in graphene/WS
- Origin and magnitude of 'designer' spin-orbit interaction in graphene on semiconducting transition metal dichalcogenides
- Proximity induced room-temperature ferromagnetism in graphene probed with spin currents
- Band offset and negative compressibility in graphene-MoS2 heterostructures
- Electrical and Thermal Generation of Spin Currents by Magnetic Graphene
- Quantum Anomalous Hall Effects in Graphene from Proximity-Induced Uniform and Staggered Spin-Orbit and Exchange Coupling
- Magnetic proximity in a van der Waals heterostructure of magnetic insulator and graphene
- Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene
- Quantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide
- Quantum resistance metrology using graphene
- Spin inversion in graphene spin valves by gate-tunable magnetic proximity effect at one-dimensional contacts
- Exchange splitting and exchange-induced non-reciprocal photonic behavior of graphene in CrI3-graphene vdW heterostructures
Cited by in corpus (4)
- Quantum Hall phase in graphene engineered by interfacial charge coupling
- Synergistic correlated states and nontrivial topology in coupled graphene-insulator heterostructures
- Giant gate-tunable renormalization of spin-correlated flat-band states and bandgap in a 2D magnetic insulator
- Large Rashba Spin-Orbit Coupling and High-Temperature Quantum Anomalous Hall Effect in Re-Intercalated Graphene/CrI Heterostructure