Field-induced breakdown of the quantum Hall effect
arXiv:cond-mat/9906264 · doi:10.1103/PhysRevB.60.8218
Abstract
A numerical analysis is made of the breakdown of the quantum Hall effect caused by the Hall electric field in competition with disorder. It turns out that in the regime of dense impurities, in particular, the number of localized states decreases exponentially with the Hall field, with its dependence on the magnetic and electric field summarized in a simple scaling law. The physical picture underlying the scaling law is clarified. This intra-subband process, the competition of the Hall field with disorder, leads to critical breakdown fields of magnitude of a few hundred V/cm, consistent with observations, and accounts for their magnetic-field dependence \propto B^{3/2} observed experimentally. Some testable consequences of the scaling law are discussed.
7 pages, Revtex, 3 figures, to appear in Phys. Rev. B
References in corpus (2)
Cited by in corpus (5)
- Electric-field-induced lifting of the valley degeneracy in alpha-(BEDT-TTF)_2I_3 Dirac-like Landau levels
- Electronic Processes at the Breakdown of the Quantum Hall Effect
- Breakdown of the integer and fractional quantum Hall states in a quantum point contact
- Nonlinear Transport of Graphene in the Quantum Hall Regime
- Current distribution in Hall bars and breakdown of the quantum Hall effect