The quantum Hall effect in graphene - a theoretical perspective
arXiv:1104.5621 · doi:10.1016/j.crhy.2011.04.012
Abstract
This short theoretical review deals with some essential ingredients for the understanding of the quantum Hall effect in graphene in comparison with the effect in conventional two-dimensional electron systems with a parabolic band dispersion. The main difference between the two systems stems from the "ultra-relativistic" character of the low-energy carriers in graphene, which are described in terms of a Dirac equation, as compared to the non-relativistic Schrödinger equation used for electrons with a parabolic band dispersion. In spite of this fundamental difference, the Hall resistance quantisation is universal in the sense that it is given in terms of the universal constant h/e^2 and an integer number, regardless of whether the charge carriers are characterised by Galilean or Lorentz invariance, for non-relativistic or relativistic carriers, respectively.
9 pages, 4 figures; brief review article for Comptes Rendus de l'Academie des Sciences; references added with respect to previous version
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Cited by in corpus (13)
- CODATA Recommended Values of the Fundamental Physical Constants: 2010
- Single-electron current sources: towards a refined definition of ampere
- Phase diagram for the quantum Hall state in monolayer graphene
- Generalized effective hamiltonian for graphene under non-uniform strain
- Direct observation of photonic Landau levels and helical edge states in strained honeycomb lattices
- Edge excitations of the canted antiferromagnetic phase of the quantum Hall state in graphene: a simplified analysis
- Effective model for Majorana modes in graphene
- Effect of electronic band dispersion curvature on de Haas-van Alphen oscillations
- Integer Quantum Hall Effect in Graphene Channel with p-n Junction at Domain Wall in Ferroelectric Substrate
- Spectrum of edge states in the quantum Hall phases in graphene
- Strain engineering of ferromagnetic-graphene-ferroelectric nanostructures
- Klein tunneling degradation and enhanced Fabry-Pérot interference in graphene/h-BN moiré-superlattice devices
- Nontrivial magnetic field related phenomena in the single-layer graphene on ferroelectric substrate