Graphene Nanogap for Gate Tunable Quantum Coherent Single Molecule Electronics
arXiv:1108.4571 · doi:10.1103/PhysRevB.84.155451
Abstract
We present atomistic calculations of quantum coherent electron transport through fulleropyrrolidine terminated molecules bridging a graphene nanogap. We predict that three difficult problems in molecular electronics with single molecules may be solved by utilizing graphene contacts: (1) a back gate modulating the Fermi level in the graphene leads facilitate control of the device conductance in a transistor effect with high on/off current ratio; (2) the size mismatch between leads and molecule is avoided, in contrast to the traditional metal contacts; (3) as a consequence, distinct features in charge flow patterns throughout the device are directly detectable by scanning techniques. We show that moderate graphene edge disorder is unimportant for the transistor function.
8 pages, 6 figures
References in corpus (7)
- Electric Field Effect in Atomically Thin Carbon Films
- Detection of Individual Gas Molecules Absorbed on Graphene
- A Higher-Accuracy van der Waals Density Functional
- Renormalization of Molecular Electronic Levels at Metal-Molecule Interfaces
- Transverse conductance of DNA nucleotides in a graphene nanogap from first principles
- Encapsulation and Electronic Control of Epitaxial Graphene by Photosensitive Polymers and UV light
- A knitting algorithm for calculating Green functions in quantum systems
Cited by in corpus (8)
- van der Waals forces in density functional theory: The vdW-DF method
- Silicene as a new ultrafast DNA sequencing device
- An analysis of van der Waals density functional components: Binding and corrugation of benzene and C60 on boron nitride and graphene
- Transverse Electronic Transport through DNA Nucleotides with Functionalized Graphene Electrodes
- Universality in the transport response of molecular wires physisorbed onto graphene electrodes
- A Harris-type van der Waals density functional scheme
- Effect of edge vacancies on localized states in semi-infinite zigzag graphene sheet
- Effect of edge vacancies on performance of planar graphene tunnel field-effect transistor