58 citations · 155 across the 5 of their papers we have counts for
5 papers
Precision quantization of Hall resistance in transferred graphene
Mirosław Woszczyna, Miriam Friedemann, Martin Götz +4
We show that quantum resistance standards made of transferred graphene reach the uncertainty of semiconductor devices, the current reference system in metrology. A large graphene d…
Versatile sputtering technology for Al2O3 gate insulators on graphene
M. Friedemann, M. Woszczyna, A. Müller +5
We report a novel fabrication method of graphene Al2O3 gate insulators based on sputtering. Electrical performance of dual-gated mono- and bilayer exfoliated graphene devices is pr…
Graphene p-n junction Arrays as Quantum-Hall Resistance Standards
Mirosław Woszczyna, Miriam Friedemann, Thorsten Dziomba +2
We demonstrate a device concept to fabricate resistance standards made of quantum Hall series arrays by using p-type and n-type graphene. The ambipolar nature of graphene allows fa…
Magneto-Transport Properties of Exfoliated Graphene on GaAs
Mirosław Woszczyna, Miriam Friedemann, Klaus Pierz +2
We studied the magneto-transport properties of graphene prepared by exfoliation on a III V semiconductor substrate. Tuneability of the carrier density of graphene was achieved by u…
Graphene on Gallium Arsenide: Engineering the visibility
M. Friedemann, K. Pierz, R. Stosch +1
Graphene consists of single or few layers of crystalline ordered carbon atoms. Its visibility on oxidized silicon (Si/SiO\_2) enabled its discovery and spawned numerous studies of…