188 citations · 610 across the 10 of their papers we have counts for
12 papers
Lithographically-controlled liquid metal diffusion in graphene: Fabrication and magneto-transport signatures of superconductivity
S. Wundrack, M. Bothe, M. Jaime +15
Metal intercalation in epitaxial graphene enables the emergence of proximity-induced superconductivity and modified quantum transport properties. However, systematic transport stud…
Growth dynamics of graphene buffer layer formation on ultra-smooth SiC(0001) surfaces
Julia Guse, Stefan Wundrack, Marius Eckert +14
In this study the growth process of epitaxial graphene on SiC was investigated systematically. The transition from the initial buffer layer growth to the formation of the first mon…
Assessment of sub-sampling schemes for compressive nano-FTIR imaging
Selma Metzner, Bernd Kästner, Manuel Marschall +6
Nano-FTIR imaging is a powerful scanning-based technique at nanometer spatial resolution which combines Fourier transform infrared spectroscopy (FTIR) and scattering-type scanning…
Silicon carbide stacking-order-induced doping variation in epitaxial graphene
Davood Momeni Pakdehi, Philip Schädlich, T. T. Nhung Nguyen +7
Generally, it is supposed that the Fermi level in epitaxial graphene is controlled by two effects: p-type polarization doping induced by the bulk of the hexagonal SiC(0001) substra…
Homogeneous Large-area Quasi-freestanding Monolayer and Bilayer Graphene on SiC
Davood Momeni Pakdehi, Klaus Pierz, Stefan Wundrack +9
In this study, we first show that the argon flow during epitaxial graphene growth is an important parameter to control the quality of the buffer and the graphene layer. Atomic forc…
Tailoring the SiC surface - a morphology study on the epitaxial growth of graphene and its buffer layer
Mattias Kruskopf, Klaus Pierz, Davood Momeni Pakdehi +4
We investigate the growth of the graphene buffer layer and the involved step bunching behavior of the silicon carbide substrate surface using atomic force microscopy. The formation…
Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC
Mattias Kruskopf, Davood Momeni Pakdehi, Klaus Pierz +12
We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultra-smooth defect- and bilayer-free graphene sheets with an unprecedented reproducib…
Improved measurement results for the Avogadro constant using a 28Si-enriched crystal
Y Azuma, P Barat, G Bartl +26
New results are reported from an ongoing international research effort to accurately determine the Avogadro constant by counting the atoms in an isotopically enriched silicon cryst…
Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment
Mattias Kruskopf, Klaus Pierz, Stefan Wundrack +8
The electrical transport properties of epitaxial graphene layers are correlated with the SiC surface morphology. In this study we show by atomic force microscopy and Raman measurem…
All-carbon vertical van der Waals heterostructures: Non-destructive functionalization of graphene for electronic applications
Miroslaw Woszczyna, Andreas Winter, Miriam Grothe +6
We present a route to non-destructive functionalization of graphene via assembly of vertical all-carbon van der Waals heterostructures. To this end, we employ singlelayer graphene…
Functional single-layer graphene sheets from aromatic monolayers
Dan G. Matei, Nils-Eike Weber, Simon Kurasch +8
We demonstrate how self-assembled monolayers of aromatic molecules on copper substrates can be converted into high-quality single-layer graphene using low-energy electron irradiati…
Versatile sputtering technology for Al2O3 gate insulators on graphene
M. Friedemann, M. Woszczyna, A. Müller +5
We report a novel fabrication method of graphene Al2O3 gate insulators based on sputtering. Electrical performance of dual-gated mono- and bilayer exfoliated graphene devices is pr…